Харвестер відкритої науки НАН України

Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines

von Boltovets, N.S., Kashin, G.N., Konakova, R.V., Lyapin, V.G., Milenin, V.V., Soloviev, E.A.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2002)

Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals

von Boltovets, N.S., Basanets, V.V., Ivanov, V.N., Krivutsa, V.A., Tsvir, A.V., Belyaev, A.E., Konakova, R.V., Lyapin, V.G., Milenin, V.V., Soloviev, E.A., Venger, E.F., Voitsikhovskyi, D.I., Kholevchuk, V.V., Mitin, V.F.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2000)

On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n⁺ -n doping step

von Sachenko, A.V., Belyaev, A.E., Boltovets, N.S., Vinogradov, A.O., Pilipenko, V.A., Petlitskaya, T.V., Anischik, V.M., Konakova, R.V., Korostinskaya, T.V., Kostylyov, V.P., Kudryk, Ya.Ya., Lyapin, V.G., Romanets, P.N., Sheremet, V.N.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2014)