Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines von Boltovets, N.S., Kashin, G.N., Konakova, R.V., Lyapin, V.G., Milenin, V.V., Soloviev, E.A.

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On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n⁺ -n doping step von Sachenko, A.V., Belyaev, A.E., Boltovets, N.S., Vinogradov, A.O., Pilipenko, V.A., Petlitskaya, T.V., Anischik, V.M., Konakova, R.V., Korostinskaya, T.V., Kostylyov, V.P., Kudryk, Ya.Ya., Lyapin, V.G., Romanets, P.N., Sheremet, V.N.

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Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals von Boltovets, N.S., Basanets, V.V., Ivanov, V.N., Krivutsa, V.A., Tsvir, A.V., Belyaev, A.E., Konakova, R.V., Lyapin, V.G., Milenin, V.V., Soloviev, E.A., Venger, E.F., Voitsikhovskyi, D.I., Kholevchuk, V.V., Mitin, V.F.

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