Харвестер відкритої науки НАН України

SERS of dye film deposited onto gold nano-clusters

за авторством Grytsenko, K., Kolomzarov, Yu., Lytvyn, O., Doroshenko, T., Strelchuk, V.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2010)

Simple method for SiC nanowires fabrication

за авторством Kiselov, V.S., Lytvyn, O.S., Yukhymchuk, V.O., Belyaev, A.E.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2011)

Morphology and optical properties of films with magnetite nanoparticles

за авторством Korovyanko, O., Dmitruk, N., Mamykin, S., Sytnyk, M., Lytvyn, O., Fochuk, P.
Опубліковано в: Functional Materials (2010)

Growth and optical properties of dye films and dye-in-polymer matrix deposited by vacuum evaporation

за авторством Grytsenko, K., Doroshenko, T., Kolomzarov, Yu., Lytvyn, O., Serik, M., Tolmachev, O., Slominski, Yu., Schrader, S.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2010)

Structural properties of nanocomposite SiO₂(Si) films obtained by ion-plasma sputtering and thermal annealing

за авторством Bratus, O.L., Evtukh, A.A., Lytvyn, O.S., Voitovych, M.V., Yukhymchuk, V.О.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2011)

Ultrasonic assisted nanomanipulations with atomic force microscope

за авторством Lytvyn, P.M., Olikh, O.Ya., Lytvyn, O.S., Dyachyns’ka, O.M., Prokopenko, I.V.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2010)

Optical properties of AlN/n-Si(111) films obtained by method of HF reactive magnetron sputtering

за авторством Zayats, M.S., Boiko, V.G., Gentsar, P.O., Vuichyk, M.V., Lytvyn, O.S., Stronski, A.V.
Опубліковано в: Functional Materials (2010)

Mechanical scanning probe nanolithography: modeling and application

за авторством Lytvyn, P.M., Lytvyn, O.S., Dyachyns’ka, O.M., Grytsenko, K.P., Schrader, S., Prokopenko, I.V.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2012)

Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy

за авторством Kladko, V.P., Datsenko, L.I., Maksimenko, Z.V., Lytvyn, O.S., Prokopenko, I.V., Zytkiewicz, Z.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2000)

TiB₂/GaAs and Au-TiB₂/GaAs structural transformations at short-term thermal treatment

за авторством Kryshtab, T.G., Lytvyn, P.M., Mazin, M.O., Lytvyn, O.S., Prokopenko, I.V., Ivanov, V.N.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (1999)

Plasmon-enhanced fluorometry based on gold nanostructure arrays. Method and device

за авторством Chegel, V.I., Lytvyn, V.K., Lopatynskyi, A.M., Shepeliavyi, P.E., Lytvyn, O.S., Goltvyanskyi, Yu.V.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

Роль механiчних напружень при iоннiй імплантацiї твердих розчинiв CdHgTe

за авторством Smirnov, A. B., Lytvyn, O. S., Morozhenko, V. A., Savkina, R. K., Smoliy, M. I., Udovytska, R. S., Sizov, F. F.
Опубліковано 2018

Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment

за авторством Konakova, R.V., Kladko, V.P., Lytvyn, O.S., Okhrimenko, O.B., Konoplev, B.G., Svetlichnyi, A.M., Lissotschenko, V.N.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2009)

Peculiarities of the PbTe nano-islet formation on BaF₂ substrate at "hot wall" epitaxy method investigated by atomic force microscopy

за авторством Sheremeta, T.I., Prokopenko, I.V., Lytvyn, P.M., Lytvyn, O.S., Vodop`yanov, V.M., Bakhtinov, A.P., Shyn`ko, E.I.
Опубліковано в: Functional Materials (2007)

Structural investigations of annealed ZnS:Cu, Ga film phosphors

за авторством Lytvyn, O.S., Khomchenko, V.S., Kryshtab, T.G., Lytvyn, P.M., Mazin, M.O., Prokopenko, I.V., Rodionov, V.Ye., Tzyrkunov, Yu.A.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2001)

Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures

за авторством Boltovets, N.S., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Mitin, V.F., Mitin, E.V., Lytvyn, O.S., Kapitanchuk, L.M.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2006)

Recrystallization processes in screen-printed CdS films

за авторством Klad’ko, V.P., Lytvyn, O.S., Lytvyn, P.M., Osipenok, N.M., Pekar, G.S., Prokopenko, I.V., Singaevsky, A.F., Korchevoy, A.A.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2002)

Strain relaxation in thin Si₁-ₓ-yGeₓCy layers on Si substrates

за авторством Valakh, M.Ya., Gamov, D.V., Dzhagan, V.M., Lytvyn, O.S., Melnik, V.P., Romanjuk, B.M., Popov, V.G., Yukhymchuk, V.O.
Опубліковано в: Functional Materials (2006)

Comparative investigation of NbN and Nb–Si–N films: experiment and theory

за авторством Ivashchenko, V.I., Scrynskyy, P.L., Lytvyn, O.S., Butenko, O.O., Sinelnichenko, O.K., Gorb, L., Hill, F., Leszczynski, J., Kozak, A.O.
Опубліковано в: Сверхтвердые материалы (2014)

Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing

за авторством Litvinov, V.L., Demakov, K.D., Agueev, O.A., Svetlichny, A.M., Konakova, R.V., Lytvyn, P.M., Lytvyn, O.S., Milenin, V.V.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2002)