Харвестер відкритої науки НАН України

Electron beam application for mechanical stress relaxation and for SI-SIO₂ interface structural regulation

за авторством Matveeva, L.A., Vanger, E.F., Holiney, R.Yu.
Опубліковано в: Вопросы атомной науки и техники (1999)

Investigation of the undersurface damaged layers in silicon wafers

за авторством Holiney, R.Yu., Matveeva, L.A., Venger, E.F.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (1999)

Analysis of the fundamental absorption edge of the films obtained from the C₆₀ fullerene molecular beam in vacuum and effect of internal mechanical stresses on it

за авторством Kolyadina, E.Yu., Matveeva, L.A., Neluba, P.L., Venger, E.F.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

Effects of interband phototunneling and filling the bands in electroreflectance spectra of germanium

за авторством Gentsar, P.A., Matveeva, L.A., Kudryavtsev, A.A., Venger, E.F.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2003)

Получение, свойства и применение тонких нанонеоднородных пленок Ge на GaAs-подложках

за авторством Venger, E. F., Lytvyn, P. M., Matveeva, L. A., Mitin, V. F., Kholevchuk, V. V.
Опубліковано 2014

The features of structural-impurity ordering of interfaces in Ta₂O₅-p-Si heterostructures (exposed to microwave pretreatment and aging) induced by further microwave treatment

за авторством Kolyadina, E.Yu., Konakova, R.V., Matveeva, L.A., Mitin, V.F., Shynkarenko, V.V., Atanassova, E.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2008)

Electroreflectance spectroscopy and scanning electron microscopy study of microrelief silicon wafers with various surface pretreatments

за авторством Gorbach, T.Ya., Holiney, R.Yu., Matiyuk, I.M., Matveeva, L.A., Svechnikov, S.V., Venger, E.F.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (1998)

Potentiality of the composite fulleren based carbon films as the stripper foils for tandem accelerators

за авторством Vasin, A.V., Matveeva, L.A., Kozeratskaya, G.N., Rusavsky, A.V., Totsky, Yu.I., Vishnevsky, I.N.
Опубліковано в: Вопросы атомной науки и техники (2001)

Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system

за авторством Konakova, R.V., Milenin, V.V., Voitsikhovskyi, D.I., Kamalov, A.B., Kolyadina, E.Yu., Lytvyn, P.M., Lytvyn, O.S., Matveeva, L.A., Prokopenko, I.V.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2001)

Influence of neutron irradiation on elctrooptical and structural properties of silicon

за авторством Groza, A.A., Venger, E.F., Varnina, V.I., Holiney, R.Yu., Litovchenko, P.G., Matveeva, L.A., Litovchenko, A.P., Sugakov, V.I., Shmatko, G.G.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2001)