Activation of porous Si blue emission due to preanodization ion implantation by Rozhin, A.G., Klyui, N.I., Litovchenko, V.G., Melnik, V.P., Romanyuk, B.N., Piryatinskii, Yu.P.

Get full text

Be-ion-implanted p-n InSb diode for infrared applications. Modeling, fabrication, and characterization by Korotyeyev, V.V., Kochelap, V.O., Sapon, S.V., Romaniuk, B.M., Melnik, V.P., Dubikovskyi, O.V., Sabov, T.M.

Get full text

The effect of ion implantation on structural damage in compositionally graded AlGaN layers by Liubchenko, O.I., Kladko, V.P., Stanchu, H.V., Sabov, T.M., Melnik, V.P., Kryvyi, S.B., Belyaev, A.Ye.

Get full text

Strain relaxation in thin Si₁-ₓ-yGeₓCy layers on Si substrates by Valakh, M.Ya., Gamov, D.V., Dzhagan, V.M., Lytvyn, O.S., Melnik, V.P., Romanjuk, B.M., Popov, V.G., Yukhymchuk, V.O.

Get full text

Electrical properties of semiconductor structures with Si nanoclusters in SiO₂ grown by high temperature annealing technology of SiOx layer, X<2 by Bunak, S.V., Buyanin, A.A., Ilchenko, V.V., Marin, V.V., Melnik, V.P., Khacevich, I.M., Tretyak, O.V., Shkavro, A.G.

Get full text

Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient by Sabov, T.M., Oberemok, O.S., Dubikovskyi, O.V., Melnik, V.P., Kladko, V.P., Romanyuk, B.M., Popov, V.G., Gudymenko, O.Yo., Safriuk, N.V.

Get full text