Resistance thermometers based on the germanium films von Mitin, V.F.

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Получение, свойства и применение тонких нанонеоднородных пленок Ge на GaAs-подложках von Venger, E. F., Lytvyn, P. M., Matveeva, L. A., Mitin, V. F., Kholevchuk, V. V.

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The features of structural-impurity ordering of interfaces in Ta₂O₅-p-Si heterostructures (exposed to microwave pretreatment and aging) induced by further microwave treatment von Kolyadina, E.Yu., Konakova, R.V., Matveeva, L.A., Mitin, V.F., Shynkarenko, V.V., Atanassova, E.

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Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures von Boltovets, N.S., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Mitin, V.F., Mitin, E.V., Lytvyn, O.S., Kapitanchuk, L.M.

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A silicon carbide thermistor von Boltovets, N.S., Kholevchuk, V.V., Konakova, R.V., Kudryk, Ya.Ya., Lytvyn, P.M., Milenin, V.V., Mitin, V.F., Mitin, E.V.

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Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals von Boltovets, N.S., Basanets, V.V., Ivanov, V.N., Krivutsa, V.A., Tsvir, A.V., Belyaev, A.E., Konakova, R.V., Lyapin, V.G., Milenin, V.V., Soloviev, E.A., Venger, E.F., Voitsikhovskyi, D.I., Kholevchuk, V.V., Mitin, V.F.

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