Resistance thermometers based on the germanium films by Mitin, V.F.

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Получение, свойства и применение тонких нанонеоднородных пленок Ge на GaAs-подложках by Venger, E. F., Lytvyn, P. M., Matveeva, L. A., Mitin, V. F., Kholevchuk, V. V.

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The features of structural-impurity ordering of interfaces in Ta₂O₅-p-Si heterostructures (exposed to microwave pretreatment and aging) induced by further microwave treatment by Kolyadina, E.Yu., Konakova, R.V., Matveeva, L.A., Mitin, V.F., Shynkarenko, V.V., Atanassova, E.

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Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures by Boltovets, N.S., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Mitin, V.F., Mitin, E.V., Lytvyn, O.S., Kapitanchuk, L.M.

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A silicon carbide thermistor by Boltovets, N.S., Kholevchuk, V.V., Konakova, R.V., Kudryk, Ya.Ya., Lytvyn, P.M., Milenin, V.V., Mitin, V.F., Mitin, E.V.

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Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals by Boltovets, N.S., Basanets, V.V., Ivanov, V.N., Krivutsa, V.A., Tsvir, A.V., Belyaev, A.E., Konakova, R.V., Lyapin, V.G., Milenin, V.V., Soloviev, E.A., Venger, E.F., Voitsikhovskyi, D.I., Kholevchuk, V.V., Mitin, V.F.

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