Mechanisms of contact resistance formation in ohmic contacts with high dislocation density (review) von A. V. Sachenko, A. E. Beljaev, N. S. Boltovets, R. V. Konakova, V. N. Sheremet

Volltext

Interface features of SiO2/SiC heterostructures according to methods for producing the SiO2 thin films von Yu. Yu. Bacherikov, N. S. Boltovets, R. V. Konakova, Yu. Kolyadina, T. M. Lednova, O. B. Okhrimenko

Volltext

Temperature dependence of contact resistance of Au Ti Pd2Si n+-Si ohmic contacts von A. E. Belyaev, N. S. Boltovets, R. V. Konakova, Ya. Ya. Kudryk, A. V. Sachenko, V. N. Sheremet

Volltext

Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes von A. E. Belyaev, N. S. Boltovets, R. V. Konakova, Ya. Ya. Kudryk, V. M. Sorokin, V. N. Sheremet, V. V. Shynkarenko

Volltext

Effect of microwave radiation on I V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN von A. E. Belyaev, N. S. Boltovets, Yu. V. Zhilyaev, V. S. Zhigunov, R. V. Konakova, V. N. Panteleev, A. V. Sachenko, V. N. Sheremet

Volltext

Features of the formation of ohmic contacts to n+-InN von P. O. Sai, N. V. Safryuk-Romanenko, D. B. But, G. Cywiński, N. S. Boltovets, P. N. Brunkov, N. V. Jmeric, S. V. Ivanov, V. V. Shynkarenko

Volltext

Features of the formation of ohmic contacts to n+-InN von P. O. Sai, N. V. Safryuk-Romanenko, D. B. But, G. Cywiński, N. S. Boltovets, P. N. Brunkov, N. V. Jmeric, S. V. Ivanov, V. V. Shynkarenko

Volltext

Method for data processing in application to ohmic contacts von A. E. Belyaev, N. S. Boltovets, R. V. Konakova, V. M. Kovtonjuk, Ya. Ya. Kudryk, V. V. Shynkarenko, M. M. Dub, P. O. Saj, S. V. Novitskii

Volltext

Role of dislocations in formation of ohmic contacts to heavily doped n-Si von A. E. Belyaev, V. A. Pilipenko, V. M. Anischik, T. V. Petlitskaya, A. V. Sachenko, V. P. Kladko, R. V. Konakova, N. S. Boltovets, T. V. Korostinskaya, L. M. Kapitanchuk

Volltext

Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n+-n-n+-Si in IMPATT diodes von P. M. Romanets, A. E. Belyaev, A. V. Sachenko, N. S. Boltovets, V. V. Basanets, R. V. Konakova, V. S. Slipokurov, A. A. Khodin, V. A. Pilipenko, V. V. Shynkarenko

Volltext

Structural and electrical-physical properties of the ohmic contacts based on palladium to n+-n-n++-n+++-InP von A. E. Belyaev, N. A. Boltovets, A. B. Bobyl, V. P. Kladko, R. V. Konakova, Ya. Ya. Kudryk, M. U. Nasyrov, A. V. Sachenko, V. S. Slipokurov, A. S. Slepova

Volltext

Ohmic contacts based on Pd to indium phosphide Gunn diodes von A. E. Belyaev, N. S. Boltovets, A. V. Bobyl, A. V. Zorenko, I. N. Arsentiev, V. P. Kladko, V. M. Kovtonyuk, R. V. Konakova, Ya. Ya. Kudryk, A. V. Sachenko

Volltext

The features of temperature dependence of contact resistivity of Au Ti Pd2Si p+-Si ohmic contacts von A. E. Belyaev, N. S. Boltovets, L. M. Kapitanchuk, R. V. Konakova, V. P. Kladko, Ya. Ya. Kudryk, A. V. Kuchuk, O. S. Lytvyn, V. V. Milenin, T. V. Korostinskaya, A. B. Ataubaeva, P. V. Nevolin

Volltext

Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density von A. V. Sachenko, A. E. Belyaev, N. S. Boltovets, Yu. V. Zhilyaev, L. M. Kapitanchuk, V. P. Kladko, R. V. Konakova, Ya. Ya. Kudryk, A. V. Kuchuk, A. V. Naumov, V. V. Panteleev, V. N. Sheremet

Volltext

Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n+-GaN ohmic contacts von A. V. Sachenko, A. E. Belyaev, N. S. Boltovets, L. M. Kapitanchuk, V. P. Kladko, R. V. Konakova, A. V. Kuchuk, T. V. Korostinskaya, A. S. Pilipchuk, V. N. Sheremet, Yu. I. Mazur, M. E. Ware, G. J. Salamo

Volltext

On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n+-n doping step von A. V. Sachenko, A. E. Belyaev, N. S. Boltovets, A. O. Vinogradov, V. A. Pilipenko, T. V. Petlitskaya, V. M. Anischik, R. V. Konakova, T. V. Korostinskaya, V. P. Kostylyov, Ya. Ya. Kudryk, V. G. Lyapin, P. N. Romanets, V. N. Sheremet

Volltext