Mechanisms of contact resistance formation in ohmic contacts with high dislocation density (review) by A. V. Sachenko, A. E. Beljaev, N. S. Boltovets, R. V. Konakova, V. N. Sheremet

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Interface features of SiO2/SiC heterostructures according to methods for producing the SiO2 thin films by Yu. Yu. Bacherikov, N. S. Boltovets, R. V. Konakova, Yu. Kolyadina, T. M. Lednova, O. B. Okhrimenko

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Temperature dependence of contact resistance of Au Ti Pd2Si n+-Si ohmic contacts by A. E. Belyaev, N. S. Boltovets, R. V. Konakova, Ya. Ya. Kudryk, A. V. Sachenko, V. N. Sheremet

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Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes by A. E. Belyaev, N. S. Boltovets, R. V. Konakova, Ya. Ya. Kudryk, V. M. Sorokin, V. N. Sheremet, V. V. Shynkarenko

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Effect of microwave radiation on I V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN by A. E. Belyaev, N. S. Boltovets, Yu. V. Zhilyaev, V. S. Zhigunov, R. V. Konakova, V. N. Panteleev, A. V. Sachenko, V. N. Sheremet

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Features of the formation of ohmic contacts to n+-InN by P. O. Sai, N. V. Safryuk-Romanenko, D. B. But, G. Cywiński, N. S. Boltovets, P. N. Brunkov, N. V. Jmeric, S. V. Ivanov, V. V. Shynkarenko

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Features of the formation of ohmic contacts to n+-InN by P. O. Sai, N. V. Safryuk-Romanenko, D. B. But, G. Cywiński, N. S. Boltovets, P. N. Brunkov, N. V. Jmeric, S. V. Ivanov, V. V. Shynkarenko

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Method for data processing in application to ohmic contacts by A. E. Belyaev, N. S. Boltovets, R. V. Konakova, V. M. Kovtonjuk, Ya. Ya. Kudryk, V. V. Shynkarenko, M. M. Dub, P. O. Saj, S. V. Novitskii

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Role of dislocations in formation of ohmic contacts to heavily doped n-Si by A. E. Belyaev, V. A. Pilipenko, V. M. Anischik, T. V. Petlitskaya, A. V. Sachenko, V. P. Kladko, R. V. Konakova, N. S. Boltovets, T. V. Korostinskaya, L. M. Kapitanchuk

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Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n+-n-n+-Si in IMPATT diodes by P. M. Romanets, A. E. Belyaev, A. V. Sachenko, N. S. Boltovets, V. V. Basanets, R. V. Konakova, V. S. Slipokurov, A. A. Khodin, V. A. Pilipenko, V. V. Shynkarenko

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Structural and electrical-physical properties of the ohmic contacts based on palladium to n+-n-n++-n+++-InP by A. E. Belyaev, N. A. Boltovets, A. B. Bobyl, V. P. Kladko, R. V. Konakova, Ya. Ya. Kudryk, M. U. Nasyrov, A. V. Sachenko, V. S. Slipokurov, A. S. Slepova

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Ohmic contacts based on Pd to indium phosphide Gunn diodes by A. E. Belyaev, N. S. Boltovets, A. V. Bobyl, A. V. Zorenko, I. N. Arsentiev, V. P. Kladko, V. M. Kovtonyuk, R. V. Konakova, Ya. Ya. Kudryk, A. V. Sachenko

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The features of temperature dependence of contact resistivity of Au Ti Pd2Si p+-Si ohmic contacts by A. E. Belyaev, N. S. Boltovets, L. M. Kapitanchuk, R. V. Konakova, V. P. Kladko, Ya. Ya. Kudryk, A. V. Kuchuk, O. S. Lytvyn, V. V. Milenin, T. V. Korostinskaya, A. B. Ataubaeva, P. V. Nevolin

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Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density by A. V. Sachenko, A. E. Belyaev, N. S. Boltovets, Yu. V. Zhilyaev, L. M. Kapitanchuk, V. P. Kladko, R. V. Konakova, Ya. Ya. Kudryk, A. V. Kuchuk, A. V. Naumov, V. V. Panteleev, V. N. Sheremet

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Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n+-GaN ohmic contacts by A. V. Sachenko, A. E. Belyaev, N. S. Boltovets, L. M. Kapitanchuk, V. P. Kladko, R. V. Konakova, A. V. Kuchuk, T. V. Korostinskaya, A. S. Pilipchuk, V. N. Sheremet, Yu. I. Mazur, M. E. Ware, G. J. Salamo

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On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n+-n doping step by A. V. Sachenko, A. E. Belyaev, N. S. Boltovets, A. O. Vinogradov, V. A. Pilipenko, T. V. Petlitskaya, V. M. Anischik, R. V. Konakova, T. V. Korostinskaya, V. P. Kostylyov, Ya. Ya. Kudryk, V. G. Lyapin, P. N. Romanets, V. N. Sheremet

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