Харвестер відкритої науки НАН України

Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization

von Naumov, A.V., Kolomys, O.F., Romanyuk, A.S., Tsykaniuk, B.I., Strelchuk, V.V., Trius, M.P., Avksentyev, A.Yu., Belyaev, A.E.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions

von Belyaev, A.E., Foxon, C.T., Novikov, S.V., Makarovsky, O., Eaves, L., Kappers, M.J., Barnard, J.S., Humphreys, C.J., Danylyuk, S.V., Vitusevich, S.A., Naumov, A.V.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2004)

Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density

von Sachenko, A.V., Belyaev, A.E., Boltovets, N.S., Zhilyaev, Yu.V., Kapitanchuk, L.M., Klad’ko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Kuchuk, A.V., Naumov, A.V., Panteleev, V.V., Sheremet, V.N.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2012)