Electron transport in AlGaN/GaN HEMT-like nanowires: Effect of depletion and UV excitation за авторством Naumov, A.V., Kaliuzhnyi, V.V., Vitusevich, S.A., Hardtdegen, H., Belyaev, A.E.

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Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization за авторством Naumov, A.V., Kolomys, O.F., Romanyuk, A.S., Tsykaniuk, B.I., Strelchuk, V.V., Trius, M.P., Avksentyev, A.Yu., Belyaev, A.E.

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Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions за авторством Belyaev, A.E., Foxon, C.T., Novikov, S.V., Makarovsky, O., Eaves, L., Kappers, M.J., Barnard, J.S., Humphreys, C.J., Danylyuk, S.V., Vitusevich, S.A., Naumov, A.V.

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Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density за авторством Sachenko, A.V., Belyaev, A.E., Boltovets, N.S., Zhilyaev, Yu.V., Kapitanchuk, L.M., Klad’ko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Kuchuk, A.V., Naumov, A.V., Panteleev, V.V., Sheremet, V.N.

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