Effect of low-energy ion bombardment during the sputtering on the crystal structure of FePt films von Naumov, V.V., Il'yashenko, E.I.

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Combustion of ethanol+air mixture supported by transverse arc plasma von Yukhymenko, V.V., Chernyak, V.Ya., Naumov, V.V., Veremii, Iu.P., Zrazhevskij, V.A.

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Silicon pad detectors for a simple tracking system and multiplicity detectors creation von Bochek, G.L., Kulibaba, V.I., Maslov, N.I., Naumov, S.V., Starodubtsev, A.F.

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Readout electronics for multichannel detectors von Kulibaba, V.I., Maslov, N.I., Naumov, S.V., Ovchinnik, V.D., Prokhorets, I.M.

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Optical properties and some applications of plasma–liquid system with discharge in the gas canal with liquid wall von Veremii, Iu.P., Chernyak, V.Ya., Naumov, V.V., Yukhymenko, V.V., Dudnyk, N.V.

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Development and application of a silicon coordinate detectors von Kulibaba, V.I., Maslov, N.I., Naumov, S.V., Ovchinnik, V.D., Potin, S.M., Starodubtsev, A.F.

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ARC discharge in a cross flow of gas von Chernyak, V.Ya., Naumov, V.V., Yukhymenko, V.V., Babich, I.L., Zrazhevskyy, V.A., Woewoda, Yu.V., Pashko, T.V.

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Temperature effect on the characteristics and lifetime of semiconductor detectors von Vasiliyev, G.P., Kosinov, A.V., Kulibaba, V.I., Maslov, N.I., Naumov, S.V., Ovchinnik, V.D., Yalovenko, V.I.

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Development of technique for testing the long-term stability of silicon microstrip detectors von Kosinov, A.V., Maslov, N. I., Naumov, S. V., Ovchinni, V. D., Starodubtsev, A. F., Vasilyev, G. P., Yalovenko, V. I., Bosisio, L.

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Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization von Naumov, A.V., Kolomys, O.F., Romanyuk, A.S., Tsykaniuk, B.I., Strelchuk, V.V., Trius, M.P., Avksentyev, A.Yu., Belyaev, A.E.

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Examination ofmulti-layer silicon detector in measurementofelectron spectrumfor beta-decayof ⁹⁰SR- ⁹⁰Y von Bochek, G.L., Golovash, A.S., Kosinov, A.V., Kotlyar, V.V., Kulibaba, V.I., Maslov, N.I., Mazilov, A.A., Naumov, S.V., Ovchinnik, V.D.

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Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions von Belyaev, A.E., Foxon, C.T., Novikov, S.V., Makarovsky, O., Eaves, L., Kappers, M.J., Barnard, J.S., Humphreys, C.J., Danylyuk, S.V., Vitusevich, S.A., Naumov, A.V.

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Plasma’s kinetics in discharge in mixture of air, water and ethanol steams and the questions of alternative fuel von Shchedrin, A.I., Levko, D.S., Ryabtsev, A.V., Chernyak, V.Ya., Yukhimenko, V.V., Ol'shevskiy, S.V., Prisyazhnevich, I.V., Solomenko, E.V., Naumov, V.V., Demchina, V.P., Kudryavtsev, V.S.

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Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density von Sachenko, A.V., Belyaev, A.E., Boltovets, N.S., Zhilyaev, Yu.V., Kapitanchuk, L.M., Klad’ko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Kuchuk, A.V., Naumov, A.V., Panteleev, V.V., Sheremet, V.N.

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