Search Results - Neimash, V. B.
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Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon by Neimash, V.B., Puzenko, O.O., Kraitchinskii, A.M., Krasko, M.M., Putselyk, S., Claeys, C., Simoen, E.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2000)Get full text
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Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum by Neimash, V.B., Poroshin, V.M., Shepeliavyi, P.Ye., Yukhymchuk, V.O., Melnyk, V.V., Makara, M.A., Kuzmich, A.G.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2013)Get full text
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Tin-induced crystallization of amorphous silicon assisted by a pulsed laser irradiation by Neimash, V.B., Melnyk, V.V., Fedorenko, L.L., Shepeliavyi, P.Ye., Strelchuk, V.V., Nikolayenko, A.S., Isaiev, M.V., Kuzmich, A.G.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2017)Get full text
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