Харвестер відкритої науки НАН України

X-ray diffraction investigation of GaN layers on Si(111) and Al₂O₃ (0001) substrates

von Safriuk, N.V., Stanchu, G.V., Kuchuk, A.V., Kladko, V.P., Belyaev, A.E., Machulin, V.F.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2013)

Current transport through ohmic contacts to indiume nitride with high defect density

von Sai, P.O., Safriuk, N.V., Shynkarenko, V.V., Brunkov, P.N., Jmerik, V.N., Ivanov, S.V.
Veröffentlicht in Functional Materials (2018)

Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios

von Kladko, V.P., Safriuk, N.V., Stanchu, H.V., Kuchuk, A.V., Melnyk, V.P., Oberemok, A.S., Kriviy, S.B., Maksymenko, Z.V., Belyaev, A.E., Yavich, B.S.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2014)