X-ray diffraction investigation of GaN layers on Si(111) and Al₂O₃ (0001) substrates за авторством Safriuk, N.V., Stanchu, G.V., Kuchuk, A.V., Kladko, V.P., Belyaev, A.E., Machulin, V.F.

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Current transport through ohmic contacts to indiume nitride with high defect density за авторством Sai, P.O., Safriuk, N.V., Shynkarenko, V.V., Brunkov, P.N., Jmerik, V.N., Ivanov, S.V.

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Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient за авторством Sabov, T.M., Oberemok, O.S., Dubikovskyi, O.V., Melnik, V.P., Kladko, V.P., Romanyuk, B.M., Popov, V.G., Gudymenko, O.Yo., Safriuk, N.V.

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Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios за авторством Kladko, V.P., Safriuk, N.V., Stanchu, H.V., Kuchuk, A.V., Melnyk, V.P., Oberemok, A.S., Kriviy, S.B., Maksymenko, Z.V., Belyaev, A.E., Yavich, B.S.

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