Харвестер відкритої науки НАН України

Effect of nonuniform doping profile on thermometric performance of diode temperature sensors

за авторством Sokolov, V.N., Shwarts, Yu.M.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2002)

Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region

за авторством Borblik, V.L., Shwarts, Yu.M., Shwarts, M.M.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2007)

Revealing the hopping mechanism of conduction in heavily doped silicon diodes

за авторством Borblik, V. L., Shwarts, Yu. M., Shwarts, M. M.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2005)

About manifestation of the piezojunction effect in diode temperature sensors

за авторством Borblik, V.L., Shwarts, Yu.M., Venger, E.F.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2003)

Effect of mechanical stress on operation of diode temperature sensors

за авторством Borblik, V.L., Shwarts, Yu.M., Venger, E.F.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2002)

A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base

за авторством Borblik, V.L., Shwarts, Yu.M., Shwarts, M.M.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2009)

Peculiarities of injection phenomena in heavily doped silicon structures and development of radiation-resistant diode temperature sensors

за авторством Shwarts, Yu.M., Sokolov, V.N., Shwarts, M.M., Venger, E.F.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2003)

Negative magnetoresistance of heavily doped silicon p-n junction

за авторством Borblik, V.L., Rudnev, I.A., Shwarts, Yu.M., Shwarts, M.M.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2011)

Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures

за авторством Shwarts, Yu.M., Kondrachuk, A.V., Shwarts, M.M., Shpinar, L.I.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2000)

Effect of magnetic field on hysteretic characteristics of silicon diodes under conditions of low-temperature impurity breakdown

за авторством Aleinikov, A.B., Berezovets, V.A., Borblik, V.L., Shwarts, M.M., Shwarts, Yu.M.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2012)

Optimized calibration of cryogenic silicon thermodiodes

за авторством Ivashchenko, O.M., Shwarts, Yu.M., Shwarts, M.M., Kopko, D.P., Sypko, M.I.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2011)

Self-consistent method for optimization of parameters of diode temperature sensors

за авторством Kulish, N.R., Shwarts, Yu.M., Borblik, V.L., Venger, Ye.F., Sokolov, V.N.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (1999)

Smoothing cubic spline approximation of silicon diode temperature sensors thermometric characteristics

за авторством Ivashchenko, O.M., Shwarts, Yu.M., Shwarts, M.M., Kopko, D.P., Sypko, N.I.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2010)

Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties

за авторством Borblik, V.L., Korchevoi, A.A., Nikolenko, A.S., Strelchuk, V.V., Fonkich, A.M., Shwarts, Yu.M., Shwarts, M.M.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2014)

Исследование термометрических характеристик GaP-диодов p+–n-типа

за авторством Krasnov, V. A., Shwarts, Yu. M., Shwarts, М. M., Kopko, D. P., Erohin, S. Yu., Fonkich, A. М., Shutov, S. V., Sypko, N. I.
Опубліковано 2008