Search Results - Shwarts, Yu.M.

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  1. 1
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    Нейросетевая аппроксимация термометрической характеристики диодного сенсора by Shwarts, Yu. M., Shwarts, Yu. M., Yaganov, P. A., Dzuba, V. G.

    Published 2005
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  2. 2
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    Effect of nonuniform doping profile on thermometric performance of diode temperature sensors by Sokolov, V.N., Shwarts, Yu.M.

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  3. 3
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    Микроэлектронные термодиодные сенсоры экстремальной электроники by Shwarts, Yu. M., Shwarts, M. M.

    Published 2005
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  4. 4
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    About manifestation of the piezojunction effect in diode temperature sensors by Borblik, V.L., Shwarts, Yu.M., Venger, E.F.

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  5. 5
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    Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region by Borblik, V.L., Shwarts, Yu.M., Shwarts, M.M.

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  6. 6
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    A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base by Borblik, V.L., Shwarts, Yu.M., Shwarts, M.M.

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  7. 7
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    Revealing the hopping mechanism of conduction in heavily doped silicon diodes by Borblik, V. L., Shwarts, Yu. M., Shwarts, M. M.

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  8. 8
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    Effect of mechanical stress on operation of diode temperature sensors by Borblik, V.L., Shwarts, Yu.M., Venger, E.F.

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  9. 9
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    Диодный сенсор температуры: анализ приборной погрешности измерения by Ivashchenko, A. N., Shwarts, Yu. M., Shwarts, М. M.

    Published 2005
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  10. 10
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    Negative magnetoresistance of heavily doped silicon p-n junction by Borblik, V.L., Rudnev, I.A., Shwarts, Yu.M., Shwarts, M.M.

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  11. 11
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    Peculiarities of injection phenomena in heavily doped silicon structures and development of radiation-resistant diode temperature sensors by Shwarts, Yu.M., Sokolov, V.N., Shwarts, M.M., Venger, E.F.

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  12. 12
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    Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures by Shwarts, Yu.M., Kondrachuk, A.V., Shwarts, M.M., Shpinar, L.I.

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  13. 13
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    New evidence of the hopping nature of the excess tunnel current in heavily doped silicon - diodes at cryogenic temperatures by Borblik, V. L., Shwarts, Yu. M., Shwarts, M. M., Aleinikov, A. B.

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  14. 14
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    Optimized calibration of cryogenic silicon thermodiodes by Ivashchenko, O.M., Shwarts, Yu.M., Shwarts, M.M., Kopko, D.P., Sypko, M.I.

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  15. 15
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    Effect of magnetic field on hysteretic characteristics of silicon diodes under conditions of low-temperature impurity breakdown by Aleinikov, A.B., Berezovets, V.A., Borblik, V.L., Shwarts, M.M., Shwarts, Yu.M.

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  16. 16
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    Smoothing cubic spline approximation of silicon diode temperature sensors thermometric characteristics by Ivashchenko, O.M., Shwarts, Yu.M., Shwarts, M.M., Kopko, D.P., Sypko, N.I.

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  17. 17
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    Self-consistent method for optimization of parameters of diode temperature sensors by Kulish, N.R., Shwarts, Yu.M., Borblik, V.L., Venger, Ye.F., Sokolov, V.N.

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  18. 18
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    Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties by Borblik, V.L., Korchevoi, A.A., Nikolenko, A.S., Strelchuk, V.V., Fonkich, A.M., Shwarts, Yu.M., Shwarts, M.M.

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  19. 19
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    Исследование термометрических характеристик GaP-диодов p+–n-типа by Krasnov, V. A., Shwarts, Yu. M., Shwarts, М. M., Kopko, D. P., Erohin, S. Yu., Fonkich, A. М., Shutov, S. V., Sypko, N. I.

    Published 2008
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