Influence of parameters inherent to ohmic contacts on properties of microwave avalanche transit-time diodes von Kudryk, Ya.Ya., Slipokurov, V.S.

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Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors von Slipokurov, V.S., Dub, M.M., Tkachenko, A.K., Kudryk, Ya.Ya.

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Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors von Slipokurov, V.S., Dub, M.M., Tkachenko, A.K., Kudryk, Ya.Ya.

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Peculiarities of the study of Au-Ti-Pd-n⁺-n-n⁺-Si multilayer contact structure to avalanche transit-time diodes von Romanets, P.M., Konakova, R.V., Boltovets, M.S., Basanets, V.V., Kudryk, Ya.Ya., Slipokurov, V.S.

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Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si in IMPATT diodes von Romanets, P.M., Belyaev, A.E., Sachenko, А.V., Boltovets, N.S., Basanets, V.V., Konakova, R.V., Slipokurov, V.S., Khodin, А.А., Pilipenko, V.А., Shynkarenko, V.V., Kudryk, Ya.Ya.

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Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP von Belyaev, A.E., Boltovets, N.A., Bobyl, A.B., Kladko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Nasyrov, M.U., Sachenko, A.V., Slipokurov, V.S., Slepova, A.S., Safryuk, N.V., Gudymenko, A.I., Shynkarenko, V.V.

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Ohmic contacts based on Pd to indium phosphide Gunn diodes von Belyaev, A.E., Boltovets, N.S., Bobyl, A.V., Zorenko, A.V., Arsentiev, I.N., Kladko, V.P., Kovtonyuk, V.M., Konakova, R.V., Kudryk, Ya.Ya., Sachenko, A.V., Slipokurov, V.S., Slepova, A.S., Safryuk, N.V., Gudymenko, A.I., Shynkarenko, V.V.

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