The mechanism of current transport in the structure Al-p-CdTe-Mo with different thickness of the base за авторством Mirsagatov, Sh.A., Uteniyazov, A.K.

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Effect of ultrasound irradiation on the electro-physical properties of the structure of Al-Al₂O₃-CdTe за авторством Uteniyazov, A.K., Ismailov, K.A.

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Recombination statistics of non-equilibrium carriers in the model of a semiconductor with donor-acceptor pairs possessing variable recombination activity за авторством Leyderman, A.Yu., Uteniyazov, A.K., Nsanbaev, M.T.

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Ti-derived intermediate band in MgH₂ за авторством Sheripov, U., Zhanabergenov, Zh., Uteniyazov, A., Ismailov, K., Karazhanov, S.

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Effect of the diffusion temperature on the interaction of clusters with impurity atoms in silicon за авторством Saparniyazova, Z.M., Ismailov, K.A., Uteniyazov, A.K., Kamalov, Kh.U.

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Features of current transport in Al–Al₂O₃–-CdTe–Mo structure за авторством Uteniyazov, A.K., Leyderman, A.Yu., Ayukhanov, R.A., Esenbaeva, E.S., Gafurova, M.V.

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Non-recombination injection mode за авторством Leyderman, A.Yu., Ayukhanov, R.A., Turmanova, R.M., Uteniyazov, A.K., Esenbaeva, E.S.

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