Search Results - Uteniyazov, A.

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  1. 1
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    The mechanism of current transport in the structure Al-p-CdTe-Mo with different thickness of the base by Mirsagatov, Sh.A., Uteniyazov, A.K.

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  2. 2
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    Effect of ultrasound irradiation on the electro-physical properties of the structure of Al-Al₂O₃-CdTe by Uteniyazov, A.K., Ismailov, K.A.

    Published 2019
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  3. 3
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    Recombination statistics of non-equilibrium carriers in the model of a semiconductor with donor-acceptor pairs possessing variable recombination activity by Leyderman, A.Yu., Uteniyazov, A.K., Nsanbaev, M.T.

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  4. 4
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    Ti-derived intermediate band in MgH₂ by Sheripov, U., Zhanabergenov, Zh., Uteniyazov, A., Ismailov, K., Karazhanov, S.

    Published in Functional Materials (2012)
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  5. 5
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    Effect of the diffusion temperature on the interaction of clusters with impurity atoms in silicon by Saparniyazova, Z.M., Ismailov, K.A., Uteniyazov, A.K., Kamalov, Kh.U.

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  6. 6
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    Features of current transport in Al–Al₂O₃–-CdTe–Mo structure by Uteniyazov, A.K., Leyderman, A.Yu., Ayukhanov, R.A., Esenbaeva, E.S., Gafurova, M.V.

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  7. 7
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    Non-recombination injection mode by Leyderman, A.Yu., Ayukhanov, R.A., Turmanova, R.M., Uteniyazov, A.K., Esenbaeva, E.S.

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