Metrological aspects of studying the specific contact resistivity of ohmic contacts by using the four-contact method von V. N. Sheremet

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Effect of microwave treatment on current flow mechanism ohmic contacts to GaN von V. N. Sheremet

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Mechanisms of contact resistance formation in ohmic contacts with high dislocation density (review) von A. V. Sachenko, A. E. Beljaev, N. S. Boltovets, R. V. Konakova, V. N. Sheremet

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Temperature dependence of contact resistance of Au Ti Pd2Si n+-Si ohmic contacts von A. E. Belyaev, N. S. Boltovets, R. V. Konakova, Ya. Ya. Kudryk, A. V. Sachenko, V. N. Sheremet

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Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes von A. E. Belyaev, N. S. Boltovets, R. V. Konakova, Ya. Ya. Kudryk, V. M. Sorokin, V. N. Sheremet, V. V. Shynkarenko

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Effect of microwave radiation on I V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN von A. E. Belyaev, N. S. Boltovets, Yu. V. Zhilyaev, V. S. Zhigunov, R. V. Konakova, V. N. Panteleev, A. V. Sachenko, V. N. Sheremet

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Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density von A. V. Sachenko, A. E. Belyaev, N. S. Boltovets, Yu. V. Zhilyaev, L. M. Kapitanchuk, V. P. Kladko, R. V. Konakova, Ya. Ya. Kudryk, A. V. Kuchuk, A. V. Naumov, V. V. Panteleev, V. N. Sheremet

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Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n+-GaN ohmic contacts von A. V. Sachenko, A. E. Belyaev, N. S. Boltovets, L. M. Kapitanchuk, V. P. Kladko, R. V. Konakova, A. V. Kuchuk, T. V. Korostinskaya, A. S. Pilipchuk, V. N. Sheremet, Yu. I. Mazur, M. E. Ware, G. J. Salamo

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On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n+-n doping step von A. V. Sachenko, A. E. Belyaev, N. S. Boltovets, A. O. Vinogradov, V. A. Pilipenko, T. V. Petlitskaya, V. M. Anischik, R. V. Konakova, T. V. Korostinskaya, V. P. Kostylyov, Ya. Ya. Kudryk, V. G. Lyapin, P. N. Romanets, V. N. Sheremet

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