Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them

за авторством Boltovets, N.S., Voitsikhovskyi, D.I., Konakova, R.V., Milenin, V.V., Makara, V.A., Rudenko, O.V., Mel’nichenko, M.M.
Опубліковано 2001

Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system

за авторством Konakova, R.V., Milenin, V.V., Voitsikhovskyi, D.I., Kamalov, A.B., Kolyadina, E.Yu., Lytvyn, P.M., Lytvyn, O.S., Matveeva, L.A., Prokopenko, I.V.
Опубліковано 2001

Contacts for silicon IMPATT and pick-off diodes

за авторством Boltovets, N.S., Goncharuk, N.M., Krivutsa, V.A., Chaika, V.E., Konakova, R.V., Milenin, V.V., Soloviev, E.A., Tagaev, M.B., Voitsikhovskyi, D.I.
Опубліковано 2000

Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals

за авторством Boltovets, N.S., Basanets, V.V., Ivanov, V.N., Krivutsa, V.A., Tsvir, A.V., Belyaev, A.E., Konakova, R.V., Lyapin, V.G., Milenin, V.V., Soloviev, E.A., Venger, E.F., Voitsikhovskyi, D.I., Kholevchuk, V.V., Mitin, V.F.
Опубліковано 2000