Харвестер відкритої науки НАН України

Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them

von Boltovets, N.S., Voitsikhovskyi, D.I., Konakova, R.V., Milenin, V.V., Makara, V.A., Rudenko, O.V., Mel’nichenko, M.M.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2001)

Contacts for silicon IMPATT and pick-off diodes

von Boltovets, N.S., Goncharuk, N.M., Krivutsa, V.A., Chaika, V.E., Konakova, R.V., Milenin, V.V., Soloviev, E.A., Tagaev, M.B., Voitsikhovskyi, D.I.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2000)

Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system

von Konakova, R.V., Milenin, V.V., Voitsikhovskyi, D.I., Kamalov, A.B., Kolyadina, E.Yu., Lytvyn, P.M., Lytvyn, O.S., Matveeva, L.A., Prokopenko, I.V.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2001)

Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals

von Boltovets, N.S., Basanets, V.V., Ivanov, V.N., Krivutsa, V.A., Tsvir, A.V., Belyaev, A.E., Konakova, R.V., Lyapin, V.G., Milenin, V.V., Soloviev, E.A., Venger, E.F., Voitsikhovskyi, D.I., Kholevchuk, V.V., Mitin, V.F.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2000)