Calculation of spin-Hamiltonian constants for extended defects (VSi-VC)0 (Ky5) in silicon carbide polytype 3C-SiC von B. D. Shanina, Ya. Bratus

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Influence of boron doping on the photosensitivity of cubic silicon carbide von V. N. Rodionov, Ya. Bratus, S. O. Voronov

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Thermal annealing and evolution of defects in neutron-irradiated cubic SiC von Ya. Bratus, R. S. Melnyk, B. D. Shanina, S. M. Okulov

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Control of photoluminescence spectra of porous nc-Si-SiOx structures by vapor treatment von V. A. Danko, Ya. Bratus, I. Z. Indutnyi, I. P. Lisovskyy, S. O. Zlobin, K. V. Michailovska, P. E. Shepeliavyi

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Behavior of hydrogen during crystallization of thin silicon films doped with tin von R. M. Rudenko, M. M. Krasko, V. V. Voitovych, A. G. Kolosyuk, Yu. Povarchuk, A. M. Kraichynskyi, V. O. Yukhymchuck, Ya. Bratus, M. V. Voitovych, I. A. Zaloilo

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Behavior of hydrogen during crystallization of thin silicon films doped with tin von R. M. Rudenko, M. M. Krasko, V. V. Voitovych, A. H. Kolosiuk, Yu. Povarchuk, A. M. Kraichynskyi, V. O. Yukhymchuk, M. V. Voitovych, Ya. Bratus, I. A. Zaloilo

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