Calculation of spin-Hamiltonian constants for extended defects (VSi-VC)0 (Ky5) in silicon carbide polytype 3C-SiC by B. D. Shanina, Ya. Bratus

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Influence of boron doping on the photosensitivity of cubic silicon carbide by V. N. Rodionov, Ya. Bratus, S. O. Voronov

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Thermal annealing and evolution of defects in neutron-irradiated cubic SiC by Ya. Bratus, R. S. Melnyk, B. D. Shanina, S. M. Okulov

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Control of photoluminescence spectra of porous nc-Si-SiOx structures by vapor treatment by V. A. Danko, Ya. Bratus, I. Z. Indutnyi, I. P. Lisovskyy, S. O. Zlobin, K. V. Michailovska, P. E. Shepeliavyi

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Behavior of hydrogen during crystallization of thin silicon films doped with tin by R. M. Rudenko, M. M. Krasko, V. V. Voitovych, A. G. Kolosyuk, Yu. Povarchuk, A. M. Kraichynskyi, V. O. Yukhymchuck, Ya. Bratus, M. V. Voitovych, I. A. Zaloilo

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Behavior of hydrogen during crystallization of thin silicon films doped with tin by R. M. Rudenko, M. M. Krasko, V. V. Voitovych, A. H. Kolosiuk, Yu. Povarchuk, A. M. Kraichynskyi, V. O. Yukhymchuk, M. V. Voitovych, Ya. Bratus, I. A. Zaloilo

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