High-resistance low-doped GaAs and AlGaAs layers obtained by LPE von Krukovsky, S.I., Zayachuk, D.M., Rybak, O.V., Mryhin, I.O.

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Получение активных слоев InP в составе гетероструктур для диодов Ганна von Vakiv, M. M., Krukovskiy, S. I., Zayachuk, D. M., Mykhashchuk, Iu. S., Krukovskiy, R. S.

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Magnetic-ordered and superconducting units inside surface layers of PbTe:Eu crystals grown from melt by using the Bridgman method von Zayachuk, D.M., Ilyina, O.S., Kaczorowski, D., Mikityuk, V.I., Shlemkevych, V.V.

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