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The Study of Amorphous Chalcogenide Materials of Memory Elements Based on Phase Transitions

The Study of Amorphous Chalcogenide Materials of Memory Elements Based on Phase Transitions

A stand was developed that allows simultaneously measure the temperature dependences of the electrical resistance (R) and optical transmittance (0) of films in the region of temperatures 300-560 K. The temperature dependences of R and 0 amorphous films of antimony-selenium have been studied. It is s...

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Bibliographic Details
Main Authors: Kyrylenko, V. K., Marjan, V. M., Durkot, M. O., Rubish, V. M.
Format: Article
Language:Ukrainian
Published: Інститут проблем реєстрації інформації НАН України 2014
Subjects:
аморфні плівки
фазові переходи
елементи пам’яті
аморфные пленки
фазовые переходы
элементы памяти
amorphous films
phase transition
memory elements
Online Access:http://drsp.ipri.kiev.ua/article/view/100252
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Summary:A stand was developed that allows simultaneously measure the temperature dependences of the electrical resistance (R) and optical transmittance (0) of films in the region of temperatures 300-560 K. The temperature dependences of R and 0 amorphous films of antimony-selenium have been studied. It is shown that their crystallization is accompanied by a sharp decrease of these parameters. The temperature range of film transition from amorphous to a crystalline state depends on the film composition, material for contacts and heat treatment conditions. Fig.: 7. Refs: 18 titles.

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