The Study of Amorphous Chalcogenide Materials of Memory Elements Based on Phase Transitions
A stand was developed that allows simultaneously measure the temperature dependences of the electrical resistance (R) and optical transmittance (0) of films in the region of temperatures 300-560 K. The temperature dependences of R and 0 amorphous films of antimony-selenium have been studied. It is s...
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| Date: | 2014 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
Інститут проблем реєстрації інформації НАН України
2014
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| Subjects: | |
| Online Access: | http://drsp.ipri.kiev.ua/article/view/100252 |
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| Journal Title: | Data Recording, Storage & Processing |
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Data Recording, Storage & Processing| Summary: | A stand was developed that allows simultaneously measure the temperature dependences of the electrical resistance (R) and optical transmittance (0) of films in the region of temperatures 300-560 K. The temperature dependences of R and 0 amorphous films of antimony-selenium have been studied. It is shown that their crystallization is accompanied by a sharp decrease of these parameters. The temperature range of film transition from amorphous to a crystalline state depends on the film composition, material for contacts and heat treatment conditions. Fig.: 7. Refs: 18 titles. |
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