The Study of Amorphous Chalcogenide Materials of Memory Elements Based on Phase Transitions

• Datum: 2014
• Hauptverfasser: Kyrylenko, V. K., Marjan, V. M., Durkot, M. O., Rubish, V. M.
• Format: Artikel
• Sprache: Ukrainisch
• Veröffentlicht: Інститут проблем реєстрації інформації НАН України 2014
• Schlagworte: amorphous films; phase transition; memory elements
• Online Zugang: http://drsp.ipri.kiev.ua/article/view/100252
• Назва журналу: Data Recording, Storage & Processing

A stand was developed that allows simultaneously measure the temperature dependences of the electrical resistance (R) and optical transmittance (0) of films in the region of temperatures 300-560 K. The temperature dependences of R and 0 amorphous films of antimony-selenium have been studied. It is s...