The use of chalcogenide glassy semiconductors to create micro- and nanoscale structures
The results on the analysis of methods for the formation of nanoscale elements on thin films of chalcogenide glassy semiconductors and their application to create optical diffraction elements are presented. When creating micro- and nanoelements of optoelectronic devices, micro / nanoelectromechanica...
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| Дата: | 2020 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | Ukrainian |
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Інститут проблем реєстрації інформації НАН України
2020
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| Онлайн доступ: | http://drsp.ipri.kiev.ua/article/view/211249 |
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| Назва журналу: | Data Recording, Storage & Processing |
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drspiprikievua-article-211249 |
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drspiprikievua-article-2112492020-09-09T22:40:48Z The use of chalcogenide glassy semiconductors to create micro- and nanoscale structures Використання халькогенідних склоподібних напівпровідників для створення мікро- та нанорозмірних структур Petrov, V. V. Kryuchуn, A. A. Rubish, V. M. Kostyukevуch, S. A. Shepeliavyi, P. E. наноструктури халькогенідні склоподібні напівпровідники неорганічні резисти плазмони ближнє поле nanostructures chalcogenide vitreous semiconductors inorganic resists plasmons near field The results on the analysis of methods for the formation of nanoscale elements on thin films of chalcogenide glassy semiconductors and their application to create optical diffraction elements are presented. When creating micro- and nanoelements of optoelectronic devices, micro / nanoelectromechanical systems (MEMS/NEMS) and diffractive optical elements, chalcogenide glassy semiconductors (CGS) can be effectively used. The use of CGS is mainly based on their sensitivity to various types of radiation, which cause structural changes in them and transparency for infrared light. Numerous studies have been carried out aimed at studying the processes of formation of nanostructures on CGS films. A number of photoinduced changes are observed in CGS, which are associated with structural transformations, phase transitions, defect formation, and atom diffusion. It is of interest to determine the technologies for the formation of micro- and nanoscale structures on CGS films that can be used to create diffractive optical elements for optoelectronic devices. Increasing the resolution of recording media based on vitreous chalcogenide semiconductors can be achieved by choosing recording modes and glass compositions, in which the nonlinearity of the exposure characteristics of photosensitive material is most pronounced, as well as the introduction of noble metal nanoparticles for excitation of precious metals for excitation. A promising area of application of chalcogenide glassy semiconductors can be direct laser recording of diffractive optical elements at upgraded laser beam recorder of master disks. The unique properties of chalcogenide glassy semiconductors allow the formation of microrelief images without selective chemical etching due to the irradiation of thin films with rays of different polarization. Fig.: 8. Refs: 41 titles. Представлено результати аналізу методів формування мікро- та нанорозмірних елементів на тонких плівках халькогенідних склоподібних напівпровідників, що базуються на численних експериментальних даних, і визначено можливості їхнього застосування для створення оптичних дифракційних елементів. Інститут проблем реєстрації інформації НАН України 2020-08-25 Article Article application/pdf http://drsp.ipri.kiev.ua/article/view/211249 10.35681/1560-9189.2020.22.2.211249 Data Recording, Storage & Processing; Vol. 22 No. 2 (2020); 7-18 Регистрация, хранение и обработка данных; Том 22 № 2 (2020); 7-18 Реєстрація, зберігання і обробка даних; Том 22 № 2 (2020); 7-18 1560-9189 uk http://drsp.ipri.kiev.ua/article/view/211249/211585 Авторське право (c) 2021 Реєстрація, зберігання і обробка даних |
| institution |
Data Recording, Storage & Processing |
| collection |
OJS |
| language |
Ukrainian |
| topic |
наноструктури халькогенідні склоподібні напівпровідники неорганічні резисти плазмони ближнє поле nanostructures chalcogenide vitreous semiconductors inorganic resists plasmons near field |
| spellingShingle |
наноструктури халькогенідні склоподібні напівпровідники неорганічні резисти плазмони ближнє поле nanostructures chalcogenide vitreous semiconductors inorganic resists plasmons near field Petrov, V. V. Kryuchуn, A. A. Rubish, V. M. Kostyukevуch, S. A. Shepeliavyi, P. E. The use of chalcogenide glassy semiconductors to create micro- and nanoscale structures |
| topic_facet |
наноструктури халькогенідні склоподібні напівпровідники неорганічні резисти плазмони ближнє поле nanostructures chalcogenide vitreous semiconductors inorganic resists plasmons near field |
| format |
Article |
| author |
Petrov, V. V. Kryuchуn, A. A. Rubish, V. M. Kostyukevуch, S. A. Shepeliavyi, P. E. |
| author_facet |
Petrov, V. V. Kryuchуn, A. A. Rubish, V. M. Kostyukevуch, S. A. Shepeliavyi, P. E. |
| author_sort |
Petrov, V. V. |
| title |
The use of chalcogenide glassy semiconductors to create micro- and nanoscale structures |
| title_short |
The use of chalcogenide glassy semiconductors to create micro- and nanoscale structures |
| title_full |
The use of chalcogenide glassy semiconductors to create micro- and nanoscale structures |
| title_fullStr |
The use of chalcogenide glassy semiconductors to create micro- and nanoscale structures |
| title_full_unstemmed |
The use of chalcogenide glassy semiconductors to create micro- and nanoscale structures |
| title_sort |
use of chalcogenide glassy semiconductors to create micro- and nanoscale structures |
| title_alt |
Використання халькогенідних склоподібних напівпровідників для створення мікро- та нанорозмірних структур |
| description |
The results on the analysis of methods for the formation of nanoscale elements on thin films of chalcogenide glassy semiconductors and their application to create optical diffraction elements are presented. When creating micro- and nanoelements of optoelectronic devices, micro / nanoelectromechanical systems (MEMS/NEMS) and diffractive optical elements, chalcogenide glassy semiconductors (CGS) can be effectively used. The use of CGS is mainly based on their sensitivity to various types of radiation, which cause structural changes in them and transparency for infrared light. Numerous studies have been carried out aimed at studying the processes of formation of nanostructures on CGS films. A number of photoinduced changes are observed in CGS, which are associated with structural transformations, phase transitions, defect formation, and atom diffusion. It is of interest to determine the technologies for the formation of micro- and nanoscale structures on CGS films that can be used to create diffractive optical elements for optoelectronic devices. Increasing the resolution of recording media based on vitreous chalcogenide semiconductors can be achieved by choosing recording modes and glass compositions, in which the nonlinearity of the exposure characteristics of photosensitive material is most pronounced, as well as the introduction of noble metal nanoparticles for excitation of precious metals for excitation. A promising area of application of chalcogenide glassy semiconductors can be direct laser recording of diffractive optical elements at upgraded laser beam recorder of master disks. The unique properties of chalcogenide glassy semiconductors allow the formation of microrelief images without selective chemical etching due to the irradiation of thin films with rays of different polarization. Fig.: 8. Refs: 41 titles. |
| publisher |
Інститут проблем реєстрації інформації НАН України |
| publishDate |
2020 |
| url |
http://drsp.ipri.kiev.ua/article/view/211249 |
| work_keys_str_mv |
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| first_indexed |
2024-04-21T19:34:13Z |
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2024-04-21T19:34:13Z |
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