The temperature dependence of the band GAPSi
With the help of mathematical modeling of the thermal broadening of the energy levels studied the temperature dependence of the band gap semiconductors. In view of the temperature dependence of the effective mass of the density of states obtained graphs temperature dependence of the band gap. Inv...
Збережено в:
| Дата: | 2013 |
|---|---|
| Автори: | , , |
| Формат: | Стаття |
| Мова: | Russian |
| Опубліковано: |
Науковий фізико-технологічний центр МОН та НАН України
2013
|
| Назва видання: | Физическая инженерия поверхности |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/100315 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | The temperature dependence of the band GAPSi / G. Guliamov, U.I. Erkaboev, N.Y. Sharibaev // Физическая инженерия поверхности. — 2013. — Т. 11, № 3. — С. 289–292. — Бібліогр.: 9 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | With the help of mathematical modeling of the thermal broadening of the energy levels studied the
temperature dependence of the band gap semiconductors. In view of the temperature dependence of
the effective mass of the density of states obtained graphs temperature dependence of the band gap.
Investigated the effect of changes in the effective mass of charge carriers on the temperature dependence
of the band gap semiconductors. The theoretical results of mathematical modeling are
compared with experimental data for Si. The theoretical results satisfactorily explain the experimental
results for Si. |
|---|