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Distribution of components in epitaxial graded band gap heterostructures Cd(Mn, Zn)Te – Cd(Mn, Zn)HgTe and their photoelectrical properties

Distribution of components in epitaxial graded band gap heterostructures Cd(Mn, Zn)Te – Cd(Mn, Zn)HgTe and their photoelectrical properties

By using the method of VPE CdMnTe-CdMnHgTe, CdZnTe-CdZnHgTe heterocompositions were fabricated. Increase of their photo-sensitivity in comparison with the CdTe-CdHgTe structure is explained by removal of deformation stresses due to introduction of isovalent component (Mn, Zn) of smaller size and due...

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Bibliographic Details
Main Authors: Vlasenko, O.I., Babentsov, V.M., Vlasenko, Z.K., Ponedilok, A.V., Kurilo, I.V., Rudyj, I.O., Kremenitskiy, V.V.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1998
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/114674
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http://dspace.nbuv.gov.ua/handle/123456789/114674

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