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2025-02-23T16:26:26-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T16:26:26-05:00 DEBUG: Deserialized SOLR response

SIMS study of deuterium distribution and thermal stability in ZMR SOI structures

SIMS measurements and thermal effusion experiments were performed to study the distribution and thermal stability of deuterium in SOI structures fabricated by zone melting recrystallization technique. It was found that the disordered structure at the silicon-buried oxide interfaces is directly relat...

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Bibliographic Details
Main Authors: Boutry-Forveille, A., Ballutaud, D., Nazarov, A.N.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1998
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/114678
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