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Influence of the surface electronic processes on the spectrometric characteristics of silicon detectors

In this paper the features of influence of the surface electron processes on the formation of silicon surface-barrier detector structures were founded, the regimes of chemical treatments of the surface for Si crystals were established with using of different combinations of etchants for the accele...

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Bibliographic Details
Main Authors: Gaidar, G.P., Berdnichenko, S.V., Vorobyov, V.G., Kochkin, V.I., Lastovetskiy, V.F., Litovchenko, P.G.
Format: Article
Language:English
Published: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2016
Series:Вопросы атомной науки и техники
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Online Access:http://dspace.nbuv.gov.ua/handle/123456789/115345
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