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Influence of the surface electronic processes on the spectrometric characteristics of silicon detectors
In this paper the features of influence of the surface electron processes on the formation of silicon surface-barrier detector structures were founded, the regimes of chemical treatments of the surface for Si crystals were established with using of different combinations of etchants for the accele...
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Main Authors: | , , , , , |
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Format: | Article |
Language: | English |
Published: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2016
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Series: | Вопросы атомной науки и техники |
Subjects: | |
Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/115345 |
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