Influence of the surface electronic processes on the spectrometric characteristics of silicon detectors

• Дата: 2016
• Автори: Gaidar, G.P., Berdnichenko, S.V., Vorobyov, V.G., Kochkin, V.I., Lastovetskiy, V.F., Litovchenko, P.G.
• Формат: Стаття
• Мова: English
• Опубліковано: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2016
• Назва видання: Вопросы атомной науки и техники
• Теми: Физика радиационных повреждений и явлений в твердых телах
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/115345
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Influence of the surface electronic processes on the spectrometric characteristics of silicon detectors / G.P. Gaidar, S.V. Berdnichenko, V.G. Vorobyov, V.I. Kochkin, V.F. Lastovetskiy, P.G. Litovchenko // Вопросы атомной науки и техники. — 2016. — № 2. — С. 17-24. — Бібліогр.: 11 назв. — англ.

In this paper the features of influence of the surface electron processes on the formation of silicon surface-barrier detector structures were founded, the regimes of chemical treatments of the surface for Si crystals were established with using of different combinations of etchants for the accelerated creation of surface-barrier structures with stable parameters, the slow regimes of etching were developed for making the detectors of plane-parallel geometry. On the basis of experimental studies concerning the improvement of the formation processes of qualitative surface-barrier structures, the fabrication technique of the silicon spectrometric detectors was optimized; the prototypes were manufactured and their characteristics were identified.