Synthesis of thin-film Ta₂O₅ coatings by reactive magnetron sputtering
The investigation results of optimal conditions for synthesis of thin-film tantalum oxide dielectric coatings using the cluster multipurpose setup are presented. The set-up consist of DC magnetron, ICP source, and mediumenergy ion source. Tantalum oxide was deposited by reactive magnetron sputteri...
Збережено в:
| Дата: | 2016 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2016
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| Назва видання: | Вопросы атомной науки и техники |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/115455 |
| Теги: |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Synthesis of thin-film Ta₂O₅ coatings by reactive magnetron sputtering / S. Yakovin, A. Zykov, S. Dudin, N. Yefymenko // Вопросы атомной науки и техники. — 2016. — № 6. — С. 248-251. — Бібліогр.: 14 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | The investigation results of optimal conditions for synthesis of thin-film tantalum oxide dielectric coatings using
the cluster multipurpose setup are presented. The set-up consist of DC magnetron, ICP source, and mediumenergy
ion source. Tantalum oxide was deposited by reactive magnetron sputtering using DC magnetron in atmosphere
of argon and oxygen. The oxygen flow was activated by passing trough the ICP source. The described equipment
allows independent control of the flows of metal atoms, of reactive particles, and of ions of rare and reactive
gas. The current-voltage characteristics of the magnetron discharge were measured as well as teir dependencies on
argon pressure and oxygen flow. |
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