Simple method for SiC nanowires fabrication
In this work, we introduce a simple and convenient approach for growing SiC nanowires (SiCNWs) directly on carbon source from graphite. The commercial SiO powder and the cheap common graphite were used as the source materials. SiCNWs have been synthesized during holding time less than 60-80 min at 1...
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Дата: | 2011 |
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Автори: | , , , |
Формат: | Стаття |
Мова: | English |
Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117602 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Цитувати: | Simple method for SiC nanowires fabrication/ V.S. Kiselov, O.S. Lytvyn, V.O. Yukhymchuk, A.E. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 7-11. — Бібліогр.: 12 назв. — англ. |
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irk-123456789-1176022017-05-26T03:02:55Z Simple method for SiC nanowires fabrication Kiselov, V.S. Lytvyn, O.S. Yukhymchuk, V.O. Belyaev, A.E. In this work, we introduce a simple and convenient approach for growing SiC nanowires (SiCNWs) directly on carbon source from graphite. The commercial SiO powder and the cheap common graphite were used as the source materials. SiCNWs have been synthesized during holding time less than 60-80 min at 1450-1500 °C by using a simple and low-cost method in an industrial furnace with a resistant heater. 2011 Article Simple method for SiC nanowires fabrication/ V.S. Kiselov, O.S. Lytvyn, V.O. Yukhymchuk, A.E. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 7-11. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS 81.07.Gf http://dspace.nbuv.gov.ua/handle/123456789/117602 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
collection |
DSpace DC |
language |
English |
description |
In this work, we introduce a simple and convenient approach for growing SiC nanowires (SiCNWs) directly on carbon source from graphite. The commercial SiO powder and the cheap common graphite were used as the source materials. SiCNWs have been synthesized during holding time less than 60-80 min at 1450-1500 °C by using a simple and low-cost method in an industrial furnace with a resistant heater. |
format |
Article |
author |
Kiselov, V.S. Lytvyn, O.S. Yukhymchuk, V.O. Belyaev, A.E. |
spellingShingle |
Kiselov, V.S. Lytvyn, O.S. Yukhymchuk, V.O. Belyaev, A.E. Simple method for SiC nanowires fabrication Semiconductor Physics Quantum Electronics & Optoelectronics |
author_facet |
Kiselov, V.S. Lytvyn, O.S. Yukhymchuk, V.O. Belyaev, A.E. |
author_sort |
Kiselov, V.S. |
title |
Simple method for SiC nanowires fabrication |
title_short |
Simple method for SiC nanowires fabrication |
title_full |
Simple method for SiC nanowires fabrication |
title_fullStr |
Simple method for SiC nanowires fabrication |
title_full_unstemmed |
Simple method for SiC nanowires fabrication |
title_sort |
simple method for sic nanowires fabrication |
publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
publishDate |
2011 |
url |
http://dspace.nbuv.gov.ua/handle/123456789/117602 |
citation_txt |
Simple method for SiC nanowires fabrication/ V.S. Kiselov, O.S. Lytvyn, V.O. Yukhymchuk, A.E. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 7-11. — Бібліогр.: 12 назв. — англ. |
series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
work_keys_str_mv |
AT kiselovvs simplemethodforsicnanowiresfabrication AT lytvynos simplemethodforsicnanowiresfabrication AT yukhymchukvo simplemethodforsicnanowiresfabrication AT belyaevae simplemethodforsicnanowiresfabrication |
first_indexed |
2023-10-18T20:30:10Z |
last_indexed |
2023-10-18T20:30:10Z |
_version_ |
1796150369031553024 |