Silicon carbide phase transition in as-grown 3C-6H polytypes junction

• Дата: 2013
• Автори: Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Svechnikov, G.S., Rodionov, V.E., Lee, S.W.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
• Назва видання: Semiconductor Physics Quantum Electronics & Optoelectronics
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/117681
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Silicon carbide phase transition in as-grown 3C-6H polytypes junction / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, G.S. Svechnikov, V.E. Rodionov, S.W. Lee // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 132-135. — Бібліогр.: 12 назв. — англ.

Perfect pure (concentration of donors ~ 10¹⁶cm⁻³ ) single crystals with joint polytypes (hexagonal-cubic) or heterojunction investigated using low temperature (4.2 K and 77 K) photoluminescence. Phase transformation started exactly from lamella between polytypes. β → α ( 3C 6H ) SiC transformation distributes from lamella as from nuclear. Photoluminescence spectra are similar to the spectrum demonstrated by pure perfect 3C-SiC crystal in the field of mechanical deformation. In the zone of joint polytypes and zone of the plastic deformation in perfect 3C-SiC crystal after bending, the same stacking faults are localized. Luminescence in the disordered α-zone as a result of phase transformation is represented by a set of intensely pronounced stacking fault spectra. These spectra reside on more or less intense background band, which are emission of the donor-acceptor pairs in SiC. Excitation luminescence spectra confirm appearance of stacking faults which are responsible for metastable intermediate microand nano-SiC structures. Solid-phase transformations β → α are related with the same intermediate metastable microstructure that take place in the transformation α → β.