Silicon carbide phase transition in as-grown 3C-6H polytypes junction

Silicon carbide phase transition in as-grown 3C-6H polytypes junction

Perfect pure (concentration of donors ~ 10¹⁶cm⁻³ ) single crystals with joint polytypes (hexagonal-cubic) or heterojunction investigated using low temperature (4.2 K and 77 K) photoluminescence. Phase transformation started exactly from lamella between polytypes. β → α ( 3C 6H ) SiC transformati...

Повний опис

Збережено в:
Бібліографічні деталі
Дата:2013
Автори: Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Svechnikov, G.S., Rodionov, V.E., Lee, S.W.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/117681
Теги: Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Silicon carbide phase transition in as-grown 3C-6H polytypes junction / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, G.S. Svechnikov, V.E. Rodionov, S.W. Lee // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 132-135. — Бібліогр.: 12 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-117681
record_format dspace
spelling irk-123456789-1176812017-05-27T03:03:50Z Silicon carbide phase transition in as-grown 3C-6H polytypes junction Vlaskina, S.I. Mishinova, G.N. Vlaskin, V.I. Svechnikov, G.S. Rodionov, V.E. Lee, S.W. Perfect pure (concentration of donors ~ 10¹⁶cm⁻³ ) single crystals with joint polytypes (hexagonal-cubic) or heterojunction investigated using low temperature (4.2 K and 77 K) photoluminescence. Phase transformation started exactly from lamella between polytypes. β → α ( 3C 6H ) SiC transformation distributes from lamella as from nuclear. Photoluminescence spectra are similar to the spectrum demonstrated by pure perfect 3C-SiC crystal in the field of mechanical deformation. In the zone of joint polytypes and zone of the plastic deformation in perfect 3C-SiC crystal after bending, the same stacking faults are localized. Luminescence in the disordered α-zone as a result of phase transformation is represented by a set of intensely pronounced stacking fault spectra. These spectra reside on more or less intense background band, which are emission of the donor-acceptor pairs in SiC. Excitation luminescence spectra confirm appearance of stacking faults which are responsible for metastable intermediate microand nano-SiC structures. Solid-phase transformations β → α are related with the same intermediate metastable microstructure that take place in the transformation α → β. 2013 Article Silicon carbide phase transition in as-grown 3C-6H polytypes junction / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, G.S. Svechnikov, V.E. Rodionov, S.W. Lee // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 132-135. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS 64.70.K-, 77.84.Bw, 81.30.-t http://dspace.nbuv.gov.ua/handle/123456789/117681 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Perfect pure (concentration of donors ~ 10¹⁶cm⁻³ ) single crystals with joint polytypes (hexagonal-cubic) or heterojunction investigated using low temperature (4.2 K and 77 K) photoluminescence. Phase transformation started exactly from lamella between polytypes. β → α ( 3C 6H ) SiC transformation distributes from lamella as from nuclear. Photoluminescence spectra are similar to the spectrum demonstrated by pure perfect 3C-SiC crystal in the field of mechanical deformation. In the zone of joint polytypes and zone of the plastic deformation in perfect 3C-SiC crystal after bending, the same stacking faults are localized. Luminescence in the disordered α-zone as a result of phase transformation is represented by a set of intensely pronounced stacking fault spectra. These spectra reside on more or less intense background band, which are emission of the donor-acceptor pairs in SiC. Excitation luminescence spectra confirm appearance of stacking faults which are responsible for metastable intermediate microand nano-SiC structures. Solid-phase transformations β → α are related with the same intermediate metastable microstructure that take place in the transformation α → β.
format Article
author Vlaskina, S.I.
Mishinova, G.N.
Vlaskin, V.I.
Svechnikov, G.S.
Rodionov, V.E.
Lee, S.W.
spellingShingle Vlaskina, S.I.
Mishinova, G.N.
Vlaskin, V.I.
Svechnikov, G.S.
Rodionov, V.E.
Lee, S.W.
Silicon carbide phase transition in as-grown 3C-6H polytypes junction
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Vlaskina, S.I.
Mishinova, G.N.
Vlaskin, V.I.
Svechnikov, G.S.
Rodionov, V.E.
Lee, S.W.
author_sort Vlaskina, S.I.
title Silicon carbide phase transition in as-grown 3C-6H polytypes junction
title_short Silicon carbide phase transition in as-grown 3C-6H polytypes junction
title_full Silicon carbide phase transition in as-grown 3C-6H polytypes junction
title_fullStr Silicon carbide phase transition in as-grown 3C-6H polytypes junction
title_full_unstemmed Silicon carbide phase transition in as-grown 3C-6H polytypes junction
title_sort silicon carbide phase transition in as-grown 3c-6h polytypes junction
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2013
url http://dspace.nbuv.gov.ua/handle/123456789/117681
citation_txt Silicon carbide phase transition in as-grown 3C-6H polytypes junction / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, G.S. Svechnikov, V.E. Rodionov, S.W. Lee // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 132-135. — Бібліогр.: 12 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT vlaskinasi siliconcarbidephasetransitioninasgrown3c6hpolytypesjunction
AT mishinovagn siliconcarbidephasetransitioninasgrown3c6hpolytypesjunction
AT vlaskinvi siliconcarbidephasetransitioninasgrown3c6hpolytypesjunction
AT svechnikovgs siliconcarbidephasetransitioninasgrown3c6hpolytypesjunction
AT rodionovve siliconcarbidephasetransitioninasgrown3c6hpolytypesjunction
AT leesw siliconcarbidephasetransitioninasgrown3c6hpolytypesjunction
first_indexed 2023-10-18T20:30:22Z
last_indexed 2023-10-18T20:30:22Z
_version_ 1796150377408626688

Схожі ресурси