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Electrical properties of semiconductor structures with Si nanoclusters in SiO₂ grown by high temperature annealing technology of SiOx layer, X<2

Electrical properties of semiconductor structures with Si nanoclusters in SiO₂ grown by high temperature annealing technology of SiOx layer, X<2

The theoretical and experimental investigations of electrical properties of the SiO₂/Si-ncs/SiO₂/Si structures grown by high temperature annealing SiOx, X<2, have been carried out. The influence of Si cluster growth conditions on frequency dependences of C - V characteristics, static and dynam...

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Main Authors: Bunak, S.V., Buyanin, A.A., Ilchenko, V.V., Marin, V.V., Melnik, V.P., Khacevich, I.M., Tretyak, O.V., Shkavro, A.G.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/117699
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http://dspace.nbuv.gov.ua/handle/123456789/117699

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