Electrical properties of semiconductor structures with Si nanoclusters in SiO₂ grown by high temperature annealing technology of SiOx layer, X<2

Electrical properties of semiconductor structures with Si nanoclusters in SiO₂ grown by high temperature annealing technology of SiOx layer, X<2

The theoretical and experimental investigations of electrical properties of the SiO₂/Si-ncs/SiO₂/Si structures grown by high temperature annealing SiOx, X<2, have been carried out. The influence of Si cluster growth conditions on frequency dependences of C - V characteristics, static and dynam...

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Бібліографічні деталі
Дата:2010
Автори: Bunak, S.V., Buyanin, A.A., Ilchenko, V.V., Marin, V.V., Melnik, V.P., Khacevich, I.M., Tretyak, O.V., Shkavro, A.G.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/117699
Теги: Додати тег
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Electrical properties of semiconductor structures with Si nanoclusters in SiO₂ grown by high temperature annealing technology of SiOx layer, X<2 / S.V. Bunak, A.A. Buyanin, V.V. Ilchenko, V.V. Marin, V.P. Melnik, I.M. Khacevich, O.V. Tretyak, A.G. Shkavro // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 12-18. — Бібліогр.: 19 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-117699
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spelling irk-123456789-1176992017-05-27T03:03:12Z Electrical properties of semiconductor structures with Si nanoclusters in SiO₂ grown by high temperature annealing technology of SiOx layer, X<2 Bunak, S.V. Buyanin, A.A. Ilchenko, V.V. Marin, V.V. Melnik, V.P. Khacevich, I.M. Tretyak, O.V. Shkavro, A.G. The theoretical and experimental investigations of electrical properties of the SiO₂/Si-ncs/SiO₂/Si structures grown by high temperature annealing SiOx, X<2, have been carried out. The influence of Si cluster growth conditions on frequency dependences of C - V characteristics, static and dynamic conductance of investigated structures has been clearly observed. As a result of theoretical modeling, C - V dependences have been calculated. The experimentally obtained negative constituent of differential capacitance has been qualitatively described. It has been experimentally found that the SiO₂/Si-ncs/SiO₂/Si structures with the tunnel dielectric layer revealed the effect of memorizing. 2010 Article Electrical properties of semiconductor structures with Si nanoclusters in SiO₂ grown by high temperature annealing technology of SiOx layer, X<2 / S.V. Bunak, A.A. Buyanin, V.V. Ilchenko, V.V. Marin, V.P. Melnik, I.M. Khacevich, O.V. Tretyak, A.G. Shkavro // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 12-18. — Бібліогр.: 19 назв. — англ. 1560-8034 PACS 73.61.Cw, Ng http://dspace.nbuv.gov.ua/handle/123456789/117699 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The theoretical and experimental investigations of electrical properties of the SiO₂/Si-ncs/SiO₂/Si structures grown by high temperature annealing SiOx, X<2, have been carried out. The influence of Si cluster growth conditions on frequency dependences of C - V characteristics, static and dynamic conductance of investigated structures has been clearly observed. As a result of theoretical modeling, C - V dependences have been calculated. The experimentally obtained negative constituent of differential capacitance has been qualitatively described. It has been experimentally found that the SiO₂/Si-ncs/SiO₂/Si structures with the tunnel dielectric layer revealed the effect of memorizing.
format Article
author Bunak, S.V.
Buyanin, A.A.
Ilchenko, V.V.
Marin, V.V.
Melnik, V.P.
Khacevich, I.M.
Tretyak, O.V.
Shkavro, A.G.
spellingShingle Bunak, S.V.
Buyanin, A.A.
Ilchenko, V.V.
Marin, V.V.
Melnik, V.P.
Khacevich, I.M.
Tretyak, O.V.
Shkavro, A.G.
Electrical properties of semiconductor structures with Si nanoclusters in SiO₂ grown by high temperature annealing technology of SiOx layer, X<2
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Bunak, S.V.
Buyanin, A.A.
Ilchenko, V.V.
Marin, V.V.
Melnik, V.P.
Khacevich, I.M.
Tretyak, O.V.
Shkavro, A.G.
author_sort Bunak, S.V.
title Electrical properties of semiconductor structures with Si nanoclusters in SiO₂ grown by high temperature annealing technology of SiOx layer, X<2
title_short Electrical properties of semiconductor structures with Si nanoclusters in SiO₂ grown by high temperature annealing technology of SiOx layer, X<2
title_full Electrical properties of semiconductor structures with Si nanoclusters in SiO₂ grown by high temperature annealing technology of SiOx layer, X<2
title_fullStr Electrical properties of semiconductor structures with Si nanoclusters in SiO₂ grown by high temperature annealing technology of SiOx layer, X<2
title_full_unstemmed Electrical properties of semiconductor structures with Si nanoclusters in SiO₂ grown by high temperature annealing technology of SiOx layer, X<2
title_sort electrical properties of semiconductor structures with si nanoclusters in sio₂ grown by high temperature annealing technology of siox layer, x<2
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2010
url http://dspace.nbuv.gov.ua/handle/123456789/117699
citation_txt Electrical properties of semiconductor structures with Si nanoclusters in SiO₂ grown by high temperature annealing technology of SiOx layer, X<2 / S.V. Bunak, A.A. Buyanin, V.V. Ilchenko, V.V. Marin, V.P. Melnik, I.M. Khacevich, O.V. Tretyak, A.G. Shkavro // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 12-18. — Бібліогр.: 19 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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AT ilchenkovv electricalpropertiesofsemiconductorstructureswithsinanoclustersinsio2grownbyhightemperatureannealingtechnologyofsioxlayerx2
AT marinvv electricalpropertiesofsemiconductorstructureswithsinanoclustersinsio2grownbyhightemperatureannealingtechnologyofsioxlayerx2
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AT tretyakov electricalpropertiesofsemiconductorstructureswithsinanoclustersinsio2grownbyhightemperatureannealingtechnologyofsioxlayerx2
AT shkavroag electricalpropertiesofsemiconductorstructureswithsinanoclustersinsio2grownbyhightemperatureannealingtechnologyofsioxlayerx2
first_indexed 2023-10-18T20:30:25Z
last_indexed 2023-10-18T20:30:25Z
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