The kinetic of point defect transformation during the annealing process in electron-irradiated silicon
The A-centers (VO) annealing and transformation of precursors to form stable СiОi defects during these processes are described. It was found the necessity to take into account annihilation of vacancy type defects with the interstitial type mobile defects to describe the annealing of defects. I...
Збережено в:
| Дата: | 2011 |
|---|---|
| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117707 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | The kinetic of point defect transformation during the annealing process in electron-irradiated silicon / G.P. Gaidar, A.P. Dolgolenko, P.G. Litovchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 213-221. — Бібліогр.: 32 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-117707 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1177072017-05-27T03:04:05Z The kinetic of point defect transformation during the annealing process in electron-irradiated silicon Gaidar, G.P. Dolgolenko, A.P. Litovchenko, P.G. The A-centers (VO) annealing and transformation of precursors to form stable СiОi defects during these processes are described. It was found the necessity to take into account annihilation of vacancy type defects with the interstitial type mobile defects to describe the annealing of defects. It was shown that the energies of migration for vacancy (V) and interstitial carbon atoms Сi that are defined by the degree of their localization in silicon lattice at the temperature close to 550 K are equal Emv = 1.1 eV and Emc = 1.16 eV, accordingly. 2011 Article The kinetic of point defect transformation during the annealing process in electron-irradiated silicon / G.P. Gaidar, A.P. Dolgolenko, P.G. Litovchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 213-221. — Бібліогр.: 32 назв. — англ. 1560-8034 PACS 61.72.Cc, Ji; 61.80.Fe, 61.82.Fk http://dspace.nbuv.gov.ua/handle/123456789/117707 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The A-centers (VO) annealing and transformation of precursors to form stable
СiОi defects during these processes are described. It was found the necessity to take into
account annihilation of vacancy type defects with the interstitial type mobile defects to
describe the annealing of defects. It was shown that the energies of migration for vacancy
(V) and interstitial carbon atoms Сi that are defined by the degree of their localization in
silicon lattice at the temperature close to 550 K are equal Emv = 1.1 eV and Emc = 1.16 eV, accordingly. |
| format |
Article |
| author |
Gaidar, G.P. Dolgolenko, A.P. Litovchenko, P.G. |
| spellingShingle |
Gaidar, G.P. Dolgolenko, A.P. Litovchenko, P.G. The kinetic of point defect transformation during the annealing process in electron-irradiated silicon Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Gaidar, G.P. Dolgolenko, A.P. Litovchenko, P.G. |
| author_sort |
Gaidar, G.P. |
| title |
The kinetic of point defect transformation during the annealing process in electron-irradiated silicon |
| title_short |
The kinetic of point defect transformation during the annealing process in electron-irradiated silicon |
| title_full |
The kinetic of point defect transformation during the annealing process in electron-irradiated silicon |
| title_fullStr |
The kinetic of point defect transformation during the annealing process in electron-irradiated silicon |
| title_full_unstemmed |
The kinetic of point defect transformation during the annealing process in electron-irradiated silicon |
| title_sort |
kinetic of point defect transformation during the annealing process in electron-irradiated silicon |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2011 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117707 |
| citation_txt |
The kinetic of point defect transformation during the annealing process in electron-irradiated silicon / G.P. Gaidar, A.P. Dolgolenko, P.G. Litovchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 213-221. — Бібліогр.: 32 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT gaidargp thekineticofpointdefecttransformationduringtheannealingprocessinelectronirradiatedsilicon AT dolgolenkoap thekineticofpointdefecttransformationduringtheannealingprocessinelectronirradiatedsilicon AT litovchenkopg thekineticofpointdefecttransformationduringtheannealingprocessinelectronirradiatedsilicon AT gaidargp kineticofpointdefecttransformationduringtheannealingprocessinelectronirradiatedsilicon AT dolgolenkoap kineticofpointdefecttransformationduringtheannealingprocessinelectronirradiatedsilicon AT litovchenkopg kineticofpointdefecttransformationduringtheannealingprocessinelectronirradiatedsilicon |
| first_indexed |
2023-10-18T20:30:26Z |
| last_indexed |
2023-10-18T20:30:26Z |
| _version_ |
1796150378785406976 |