8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions
In this paper the results of photoluminescence researches devoted to phase transitions in 6H-3C-SiC have been presented. High pure 6H-SiC crystals grown by Tairov’s method with and without polytype joint before and after plastic deformation at high temperature annealing were investigated using op...
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| Дата: | 2013 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117728 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | 8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 273-279. — Бібліогр.: 26 назв. — англ. |
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irk-123456789-1177282017-05-27T03:03:13Z 8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions Vlaskina, S.I. Mishinova, G.N. Vlaskin, V.I. Rodionov, V.E. Svechnikov, G.S. In this paper the results of photoluminescence researches devoted to phase transitions in 6H-3C-SiC have been presented. High pure 6H-SiC crystals grown by Tairov’s method with and without polytype joint before and after plastic deformation at high temperature annealing were investigated using optical spectroscopy. Low temperature photoluminescence changes in the transition phase of SiC crystal represented with the stalking fault spectra within the temperature range 4.2 to 35 K. The stalking fault spectra indicate formation of metastable nanostructures in SiC crystals (14H₁ <4334>, 10H₂ <55>, 14H₂ <77>). The phononless part of each stalking fault spectrum consists of two components of radiative recombination that are responsible for hexagonal and cubic arrangement of atoms. Each of radiative recombination components in the stalking fault spectrum has the width of entire band 34 meV and shifts relative to each other by 26 meV. The overlap area of those components equals to 8 meV. The super-fine structure of the recombination components in spectrum is observed, and it is related to different Si – Si or C – C and Si – C bonds. Behavior of all the stalking fault spectra is similar (temperature, decay of luminescence). The processes of the phase transition are explained by the mechanism of interfacial rearrangements in the SiC crystals. 2013 Article 8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 273-279. — Бібліогр.: 26 назв. — англ. 1560-8034 PACS 64.70.K-, 78.60.Lc http://dspace.nbuv.gov.ua/handle/123456789/117728 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
In this paper the results of photoluminescence researches devoted to phase
transitions in 6H-3C-SiC have been presented. High pure 6H-SiC crystals grown by
Tairov’s method with and without polytype joint before and after plastic deformation at
high temperature annealing were investigated using optical spectroscopy. Low
temperature photoluminescence changes in the transition phase of SiC crystal represented
with the stalking fault spectra within the temperature range 4.2 to 35 K. The stalking
fault spectra indicate formation of metastable nanostructures in SiC crystals (14H₁
<4334>, 10H₂ <55>, 14H₂ <77>). The phononless part of each stalking fault spectrum
consists of two components of radiative recombination that are responsible for hexagonal
and cubic arrangement of atoms. Each of radiative recombination components in the
stalking fault spectrum has the width of entire band 34 meV and shifts relative to each
other by 26 meV. The overlap area of those components equals to 8 meV. The super-fine
structure of the recombination components in spectrum is observed, and it is related to
different Si – Si or C – C and Si – C bonds. Behavior of all the stalking fault spectra is
similar (temperature, decay of luminescence). The processes of the phase transition are
explained by the mechanism of interfacial rearrangements in the SiC crystals. |
| format |
Article |
| author |
Vlaskina, S.I. Mishinova, G.N. Vlaskin, V.I. Rodionov, V.E. Svechnikov, G.S. |
| spellingShingle |
Vlaskina, S.I. Mishinova, G.N. Vlaskin, V.I. Rodionov, V.E. Svechnikov, G.S. 8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Vlaskina, S.I. Mishinova, G.N. Vlaskin, V.I. Rodionov, V.E. Svechnikov, G.S. |
| author_sort |
Vlaskina, S.I. |
| title |
8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions |
| title_short |
8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions |
| title_full |
8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions |
| title_fullStr |
8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions |
| title_full_unstemmed |
8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions |
| title_sort |
8h-, 10h-, 14h-sic formation in 6h-3c silicon carbide phase transitions |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2013 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117728 |
| citation_txt |
8H-, 10H-, 14H-SiC formation
in 6H-3C silicon carbide phase transitions / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 273-279. — Бібліогр.: 26 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:30:29Z |
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