Isothermal growth kinetics of CdxHg₁₋xTe LPE layers
Within the diffusion-limited growth model, the kinetic analysis of the LPE process for CdxHg₁₋xTe solid solutions is carried out. It is assumed that a phase equilibrium exists on the interface, and the concentrations of components are connected by the equations of phase equilibria in the frame...
Збережено в:
| Дата: | 2007 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117889 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Isothermal growth kinetics of CdxHg₁₋xTe LPE layers / P.P. Moskvin, V.V. Khodakovsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 29-33. — Бібліогр.: 15 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Within the diffusion-limited growth model, the kinetic analysis of the LPE
process for CdxHg₁₋xTe solid solutions is carried out. It is assumed that a phase
equilibrium exists on the interface, and the concentrations of components are connected
by the equations of phase equilibria in the frame of the model of polyassociated
solutions. These equations serve as the boundary conditions in solving the diffusion mass transfer problem. The developed thermodynamic model of growth allowed us to achieve the precision description of solid solutions, in particular to predict the regimes of the growth of layers with a given composition in the Cd-Hg-Te system. |
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