High-resistance low-doped GaAs and AlGaAs layers obtained by LPE
Influence of Yb and Al co-doping gallium melt during LPE growth of the GaAs epitaxial layers on their properties is investigated. It is shown that both morphology and electrophysical parameters of the films are changed under influence of the doping impurities applied. Obtained results are explained...
Збережено в:
| Дата: | 2003 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117942 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | High-resistance low-doped GaAs and AlGaAs layers obtained by LPE / S.I. Krukovsky, D.M. Zayachuk, O.V. Rybak, I.O. Mryhin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 55-57. — Бібліогр.: 9 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-117942 |
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dspace |
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irk-123456789-1179422017-05-28T03:04:26Z High-resistance low-doped GaAs and AlGaAs layers obtained by LPE Krukovsky, S.I. Zayachuk, D.M. Rybak, O.V. Mryhin, I.O. Influence of Yb and Al co-doping gallium melt during LPE growth of the GaAs epitaxial layers on their properties is investigated. It is shown that both morphology and electrophysical parameters of the films are changed under influence of the doping impurities applied. Obtained results are explained by simultaneous Yb gettering action with respect to oxygen and silicon in the solution-melt, and also by lowering the concentration of Si in the films due to Al entering into Ga sub-lattice. 2003 Article High-resistance low-doped GaAs and AlGaAs layers obtained by LPE / S.I. Krukovsky, D.M. Zayachuk, O.V. Rybak, I.O. Mryhin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 55-57. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS: 73.61.Ey http://dspace.nbuv.gov.ua/handle/123456789/117942 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Influence of Yb and Al co-doping gallium melt during LPE growth of the GaAs epitaxial layers on their properties is investigated. It is shown that both morphology and electrophysical parameters of the films are changed under influence of the doping impurities applied. Obtained results are explained by simultaneous Yb gettering action with respect to oxygen and silicon in the solution-melt, and also by lowering the concentration of Si in the films due to Al entering into Ga sub-lattice. |
| format |
Article |
| author |
Krukovsky, S.I. Zayachuk, D.M. Rybak, O.V. Mryhin, I.O. |
| spellingShingle |
Krukovsky, S.I. Zayachuk, D.M. Rybak, O.V. Mryhin, I.O. High-resistance low-doped GaAs and AlGaAs layers obtained by LPE Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Krukovsky, S.I. Zayachuk, D.M. Rybak, O.V. Mryhin, I.O. |
| author_sort |
Krukovsky, S.I. |
| title |
High-resistance low-doped GaAs and AlGaAs layers obtained by LPE |
| title_short |
High-resistance low-doped GaAs and AlGaAs layers obtained by LPE |
| title_full |
High-resistance low-doped GaAs and AlGaAs layers obtained by LPE |
| title_fullStr |
High-resistance low-doped GaAs and AlGaAs layers obtained by LPE |
| title_full_unstemmed |
High-resistance low-doped GaAs and AlGaAs layers obtained by LPE |
| title_sort |
high-resistance low-doped gaas and algaas layers obtained by lpe |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2003 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117942 |
| citation_txt |
High-resistance low-doped GaAs and AlGaAs layers obtained by LPE / S.I. Krukovsky, D.M. Zayachuk, O.V. Rybak, I.O. Mryhin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 55-57. — Бібліогр.: 9 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:30:58Z |
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