Diffusion and mobility of native point defects in narrow-gap Hg₁-xCdxTe crystals
Results of investigations of mercury vacancy diffusion in the narrow-gap Hg₁-xCdxTe crystals are presented. A new theory for mercury diffusion in a gradient of native defect concentration is proposed. The theory takes into account the effect of charged defect drift in the internal electric field ari...
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| Дата: | 2003 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117948 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Diffusion and mobility of native point defects in narrow-gap Hg₁-xCdxTe crystals / V.V. Bogoboyashchyy, A.I. Elizarov, K.R. Kurbanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 47-52. — Бібліогр.: 18 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-117948 |
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irk-123456789-1179482017-05-28T03:05:16Z Diffusion and mobility of native point defects in narrow-gap Hg₁-xCdxTe crystals Elizarov, A.I. Kurbanov, K.R. Bogoboyashchyy, V.V. Results of investigations of mercury vacancy diffusion in the narrow-gap Hg₁-xCdxTe crystals are presented. A new theory for mercury diffusion in a gradient of native defect concentration is proposed. The theory takes into account the effect of charged defect drift in the internal electric field arising in the crystal at such process. Using this theory, the mercury vacancy diffusion coefficient in the Hg₁-xCdxTe (x ~ 0.2) crystals at 384-690 K has been found: DV = cm²/s. The result is found by fitting the experimental diffusion distribution of the vacancies obtained by a reliable optical method of local free carrier concentration measurements, on the one hand, and data of vacancy coagulation rate measurements, on the other hand. The mercury vacancy diffusion runs rather slowly at T < 690 K. 2003 Article Diffusion and mobility of native point defects in narrow-gap Hg₁-xCdxTe crystals / V.V. Bogoboyashchyy, A.I. Elizarov, K.R. Kurbanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 47-52. — Бібліогр.: 18 назв. — англ. 1560-8034 PACS: 73.61.Ga; 61.72.Vv; 61.72.Yx; 61.72.Ss http://dspace.nbuv.gov.ua/handle/123456789/117948 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Results of investigations of mercury vacancy diffusion in the narrow-gap Hg₁-xCdxTe crystals are presented. A new theory for mercury diffusion in a gradient of native defect concentration is proposed. The theory takes into account the effect of charged defect drift in the internal electric field arising in the crystal at such process. Using this theory, the mercury vacancy diffusion coefficient in the Hg₁-xCdxTe (x ~ 0.2) crystals at 384-690 K has been found: DV = cm²/s. The result is found by fitting the experimental diffusion distribution of the vacancies obtained by a reliable optical method of local free carrier concentration measurements, on the one hand, and data of vacancy coagulation rate measurements, on the other hand. The mercury vacancy diffusion runs rather slowly at T < 690 K. |
| format |
Article |
| author |
Elizarov, A.I. Kurbanov, K.R. Bogoboyashchyy, V.V. |
| spellingShingle |
Elizarov, A.I. Kurbanov, K.R. Bogoboyashchyy, V.V. Diffusion and mobility of native point defects in narrow-gap Hg₁-xCdxTe crystals Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Elizarov, A.I. Kurbanov, K.R. Bogoboyashchyy, V.V. |
| author_sort |
Elizarov, A.I. |
| title |
Diffusion and mobility of native point defects in narrow-gap Hg₁-xCdxTe crystals |
| title_short |
Diffusion and mobility of native point defects in narrow-gap Hg₁-xCdxTe crystals |
| title_full |
Diffusion and mobility of native point defects in narrow-gap Hg₁-xCdxTe crystals |
| title_fullStr |
Diffusion and mobility of native point defects in narrow-gap Hg₁-xCdxTe crystals |
| title_full_unstemmed |
Diffusion and mobility of native point defects in narrow-gap Hg₁-xCdxTe crystals |
| title_sort |
diffusion and mobility of native point defects in narrow-gap hg₁-xcdxte crystals |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2003 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117948 |
| citation_txt |
Diffusion and mobility of native point defects in narrow-gap Hg₁-xCdxTe crystals / V.V. Bogoboyashchyy, A.I. Elizarov, K.R. Kurbanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 47-52. — Бібліогр.: 18 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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| first_indexed |
2023-10-18T20:30:59Z |
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2023-10-18T20:30:59Z |
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