Characterization of CdTe+Mn crystals depending on doping procedure
Electrophysical properties of CdTe+Mn crystals grown by three different doping scheme of manganese introduction were studied. It was found that the properties of the CdTe crystals doped with Mn strongly depend on both the initial manganese concentration and the doping procedure. Introduction of Mn i...
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| Дата: | 2003 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117986 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Characterization of CdTe+Mn crystals depending on doping procedure / E.S. Nikoniuk, Z.I. Zakharuk, I.M. Rarenko, M.I. Kuchma, I.M. Yurijchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 160-163. — Бібліогр.: 7 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1179862017-05-28T03:05:30Z Characterization of CdTe+Mn crystals depending on doping procedure Nikoniuk, E.S. Zakharuk, Z.I. Rarenko, I.M. Kuchma, M.I. Yurijchuk, I.M. Electrophysical properties of CdTe+Mn crystals grown by three different doping scheme of manganese introduction were studied. It was found that the properties of the CdTe crystals doped with Mn strongly depend on both the initial manganese concentration and the doping procedure. Introduction of Mn in above-stoichiometric limit in concentration of C₀ < 10¹⁹ cm⁻³ gives n-type crystals. When manganese concentration is of C₀ >= 10¹⁹ cm⁻³ electron conductivity is not observed so as in the Cd₁₋xMnxTe solid solution crystals. A model explaining this phenomenon is proposed. Although manganese impurity in the CdTe crystals doesn't reveal any electrical activity it provides a formation of above-stoichiometric cadmium in electrically active positions Cdi and as a component of precipitates. An influence of above-stoichiometric cadmium is determined both by manganese concentration and by doping schemes, as well as by annealing and cooling temperature conditions of the doped samples. 2003 Article Characterization of CdTe+Mn crystals depending on doping procedure / E.S. Nikoniuk, Z.I. Zakharuk, I.M. Rarenko, M.I. Kuchma, I.M. Yurijchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 160-163. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS: 71.55.Gs; 72.20.Jv http://dspace.nbuv.gov.ua/handle/123456789/117986 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Electrophysical properties of CdTe+Mn crystals grown by three different doping scheme of manganese introduction were studied. It was found that the properties of the CdTe crystals doped with Mn strongly depend on both the initial manganese concentration and the doping procedure. Introduction of Mn in above-stoichiometric limit in concentration of C₀ < 10¹⁹ cm⁻³ gives n-type crystals. When manganese concentration is of C₀ >= 10¹⁹ cm⁻³ electron conductivity is not observed so as in the Cd₁₋xMnxTe solid solution crystals. A model explaining this phenomenon is proposed. Although manganese impurity in the CdTe crystals doesn't reveal any electrical activity it provides a formation of above-stoichiometric cadmium in electrically active positions Cdi and as a component of precipitates. An influence of above-stoichiometric cadmium is determined both by manganese concentration and by doping schemes, as well as by annealing and cooling temperature conditions of the doped samples. |
| format |
Article |
| author |
Nikoniuk, E.S. Zakharuk, Z.I. Rarenko, I.M. Kuchma, M.I. Yurijchuk, I.M. |
| spellingShingle |
Nikoniuk, E.S. Zakharuk, Z.I. Rarenko, I.M. Kuchma, M.I. Yurijchuk, I.M. Characterization of CdTe+Mn crystals depending on doping procedure Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Nikoniuk, E.S. Zakharuk, Z.I. Rarenko, I.M. Kuchma, M.I. Yurijchuk, I.M. |
| author_sort |
Nikoniuk, E.S. |
| title |
Characterization of CdTe+Mn crystals depending on doping procedure |
| title_short |
Characterization of CdTe+Mn crystals depending on doping procedure |
| title_full |
Characterization of CdTe+Mn crystals depending on doping procedure |
| title_fullStr |
Characterization of CdTe+Mn crystals depending on doping procedure |
| title_full_unstemmed |
Characterization of CdTe+Mn crystals depending on doping procedure |
| title_sort |
characterization of cdte+mn crystals depending on doping procedure |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2003 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117986 |
| citation_txt |
Characterization of CdTe+Mn crystals depending on doping procedure / E.S. Nikoniuk, Z.I. Zakharuk, I.M. Rarenko, M.I. Kuchma, I.M. Yurijchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 160-163. — Бібліогр.: 7 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:31:04Z |
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2023-10-18T20:31:04Z |
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