Characterization of CdTe+Mn crystals depending on doping procedure

Electrophysical properties of CdTe+Mn crystals grown by three different doping scheme of manganese introduction were studied. It was found that the properties of the CdTe crystals doped with Mn strongly depend on both the initial manganese concentration and the doping procedure. Introduction of Mn i...

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Дата:2003
Автори: Nikoniuk, E.S., Zakharuk, Z.I., Rarenko, I.M., Kuchma, M.I., Yurijchuk, I.M.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/117986
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Characterization of CdTe+Mn crystals depending on doping procedure / E.S. Nikoniuk, Z.I. Zakharuk, I.M. Rarenko, M.I. Kuchma, I.M. Yurijchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 160-163. — Бібліогр.: 7 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1179862017-05-28T03:05:30Z Characterization of CdTe+Mn crystals depending on doping procedure Nikoniuk, E.S. Zakharuk, Z.I. Rarenko, I.M. Kuchma, M.I. Yurijchuk, I.M. Electrophysical properties of CdTe+Mn crystals grown by three different doping scheme of manganese introduction were studied. It was found that the properties of the CdTe crystals doped with Mn strongly depend on both the initial manganese concentration and the doping procedure. Introduction of Mn in above-stoichiometric limit in concentration of C₀ < 10¹⁹ cm⁻³ gives n-type crystals. When manganese concentration is of C₀ >= 10¹⁹ cm⁻³ electron conductivity is not observed so as in the Cd₁₋xMnxTe solid solution crystals. A model explaining this phenomenon is proposed. Although manganese impurity in the CdTe crystals doesn't reveal any electrical activity it provides a formation of above-stoichiometric cadmium in electrically active positions Cdi and as a component of precipitates. An influence of above-stoichiometric cadmium is determined both by manganese concentration and by doping schemes, as well as by annealing and cooling temperature conditions of the doped samples. 2003 Article Characterization of CdTe+Mn crystals depending on doping procedure / E.S. Nikoniuk, Z.I. Zakharuk, I.M. Rarenko, M.I. Kuchma, I.M. Yurijchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 160-163. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS: 71.55.Gs; 72.20.Jv http://dspace.nbuv.gov.ua/handle/123456789/117986 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Electrophysical properties of CdTe+Mn crystals grown by three different doping scheme of manganese introduction were studied. It was found that the properties of the CdTe crystals doped with Mn strongly depend on both the initial manganese concentration and the doping procedure. Introduction of Mn in above-stoichiometric limit in concentration of C₀ < 10¹⁹ cm⁻³ gives n-type crystals. When manganese concentration is of C₀ >= 10¹⁹ cm⁻³ electron conductivity is not observed so as in the Cd₁₋xMnxTe solid solution crystals. A model explaining this phenomenon is proposed. Although manganese impurity in the CdTe crystals doesn't reveal any electrical activity it provides a formation of above-stoichiometric cadmium in electrically active positions Cdi and as a component of precipitates. An influence of above-stoichiometric cadmium is determined both by manganese concentration and by doping schemes, as well as by annealing and cooling temperature conditions of the doped samples.
format Article
author Nikoniuk, E.S.
Zakharuk, Z.I.
Rarenko, I.M.
Kuchma, M.I.
Yurijchuk, I.M.
spellingShingle Nikoniuk, E.S.
Zakharuk, Z.I.
Rarenko, I.M.
Kuchma, M.I.
Yurijchuk, I.M.
Characterization of CdTe+Mn crystals depending on doping procedure
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Nikoniuk, E.S.
Zakharuk, Z.I.
Rarenko, I.M.
Kuchma, M.I.
Yurijchuk, I.M.
author_sort Nikoniuk, E.S.
title Characterization of CdTe+Mn crystals depending on doping procedure
title_short Characterization of CdTe+Mn crystals depending on doping procedure
title_full Characterization of CdTe+Mn crystals depending on doping procedure
title_fullStr Characterization of CdTe+Mn crystals depending on doping procedure
title_full_unstemmed Characterization of CdTe+Mn crystals depending on doping procedure
title_sort characterization of cdte+mn crystals depending on doping procedure
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2003
url http://dspace.nbuv.gov.ua/handle/123456789/117986
citation_txt Characterization of CdTe+Mn crystals depending on doping procedure / E.S. Nikoniuk, Z.I. Zakharuk, I.M. Rarenko, M.I. Kuchma, I.M. Yurijchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 160-163. — Бібліогр.: 7 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT nikoniukes characterizationofcdtemncrystalsdependingondopingprocedure
AT zakharukzi characterizationofcdtemncrystalsdependingondopingprocedure
AT rarenkoim characterizationofcdtemncrystalsdependingondopingprocedure
AT kuchmami characterizationofcdtemncrystalsdependingondopingprocedure
AT yurijchukim characterizationofcdtemncrystalsdependingondopingprocedure
first_indexed 2023-10-18T20:31:04Z
last_indexed 2023-10-18T20:31:04Z
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