Effects of interband phototunneling and filling the bands in electroreflectance spectra of germanium
Electroreflectance spectra of chemically etched (110) surface of intrinsic germanium are measured in the range of E₁, E₁ + Δ₁ transitions for ||[100] and ||[10] directions of the polarization vector. Separated are isotropic (surface) and anisotropic (bulk) electroreflectance components. The spectrum...
Збережено в:
| Дата: | 2003 |
|---|---|
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117992 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Effects of interband phototunneling and filling the bands in electroreflectance spectra of germanium / P.A. Gentsar, L.A. Matveeva, A.A. Kudryavtsev, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 141-146. — Бібліогр.: 16 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-117992 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1179922017-05-28T03:05:34Z Effects of interband phototunneling and filling the bands in electroreflectance spectra of germanium Gentsar, P.A. Matveeva, L.A. Kudryavtsev, A.A. Venger, E.F. Electroreflectance spectra of chemically etched (110) surface of intrinsic germanium are measured in the range of E₁, E₁ + Δ₁ transitions for ||[100] and ||[10] directions of the polarization vector. Separated are isotropic (surface) and anisotropic (bulk) electroreflectance components. The spectrum of the bulk electroreflectance component (the Keldysh-Franz effect), as it can be deduced from its phase, corresponds to the case when energy bands are bent up if going to the surface. This situation is possible in the conditions of filling the bands only at presence of an extremum in the semiconductor energy scheme. Appearance of this extremum can be related to the fact that the electron wave function at the surface is equal to zero or defermined by mirror image force action. 2003 Article Effects of interband phototunneling and filling the bands in electroreflectance spectra of germanium / P.A. Gentsar, L.A. Matveeva, A.A. Kudryavtsev, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 141-146. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS: 78.20.Jq, 78.40.Fy, 78.68.+m http://dspace.nbuv.gov.ua/handle/123456789/117992 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Electroreflectance spectra of chemically etched (110) surface of intrinsic germanium are measured in the range of E₁, E₁ + Δ₁ transitions for ||[100] and ||[10] directions of the polarization vector. Separated are isotropic (surface) and anisotropic (bulk) electroreflectance components. The spectrum of the bulk electroreflectance component (the Keldysh-Franz effect), as it can be deduced from its phase, corresponds to the case when energy bands are bent up if going to the surface. This situation is possible in the conditions of filling the bands only at presence of an extremum in the semiconductor energy scheme. Appearance of this extremum can be related to the fact that the electron wave function at the surface is equal to zero or defermined by mirror image force action. |
| format |
Article |
| author |
Gentsar, P.A. Matveeva, L.A. Kudryavtsev, A.A. Venger, E.F. |
| spellingShingle |
Gentsar, P.A. Matveeva, L.A. Kudryavtsev, A.A. Venger, E.F. Effects of interband phototunneling and filling the bands in electroreflectance spectra of germanium Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Gentsar, P.A. Matveeva, L.A. Kudryavtsev, A.A. Venger, E.F. |
| author_sort |
Gentsar, P.A. |
| title |
Effects of interband phototunneling and filling the bands in electroreflectance spectra of germanium |
| title_short |
Effects of interband phototunneling and filling the bands in electroreflectance spectra of germanium |
| title_full |
Effects of interband phototunneling and filling the bands in electroreflectance spectra of germanium |
| title_fullStr |
Effects of interband phototunneling and filling the bands in electroreflectance spectra of germanium |
| title_full_unstemmed |
Effects of interband phototunneling and filling the bands in electroreflectance spectra of germanium |
| title_sort |
effects of interband phototunneling and filling the bands in electroreflectance spectra of germanium |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2003 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117992 |
| citation_txt |
Effects of interband phototunneling and filling the bands in electroreflectance spectra of germanium / P.A. Gentsar, L.A. Matveeva, A.A. Kudryavtsev, E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 141-146. — Бібліогр.: 16 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT gentsarpa effectsofinterbandphototunnelingandfillingthebandsinelectroreflectancespectraofgermanium AT matveevala effectsofinterbandphototunnelingandfillingthebandsinelectroreflectancespectraofgermanium AT kudryavtsevaa effectsofinterbandphototunnelingandfillingthebandsinelectroreflectancespectraofgermanium AT vengeref effectsofinterbandphototunnelingandfillingthebandsinelectroreflectancespectraofgermanium |
| first_indexed |
2023-10-18T20:31:05Z |
| last_indexed |
2023-10-18T20:31:05Z |
| _version_ |
1796150408510439424 |