Effect of the sapphire substrate on spectral emission features of LEDs based on InGaN/AlGaN/GaN heterostructures
Luminescence spectra of blue and green LEDs based on InxGa₁₋xN/AlyGa₁₋yN/GaN heterostructures with many quantum wells in the current range 0.1 to 10 mA have been studied besides the main electroluminescence band. In the emission spectra of blue LEDs, the energy maximum position is shifted with chang...
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| Дата: | 2003 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118015 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Effect of the sapphire substrate on spectral emission features of LEDs based on InGaN/AlGaN/GaN heterostructures / D.I. Bletskan, O.R. Lukyanchuk, O.D. Bletskan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 189-191. — Бібліогр.: 4 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118015 |
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irk-123456789-1180152017-05-29T03:05:47Z Effect of the sapphire substrate on spectral emission features of LEDs based on InGaN/AlGaN/GaN heterostructures Bletskan, D.I. Lukyanchuk, O.R. Bletskan, O.D. Luminescence spectra of blue and green LEDs based on InxGa₁₋xN/AlyGa₁₋yN/GaN heterostructures with many quantum wells in the current range 0.1 to 10 mA have been studied besides the main electroluminescence band. In the emission spectra of blue LEDs, the energy maximum position is shifted with changing the current (hn max = 2.62 - 2.63 eV). A weak doublet of R-lines 692.8 and 694.3 nm conditioned by the re-emission of single Cr³⁺ ions in a sapphire substrate has been fixed. The use of substrates from heavy doped ruby for making white LEDs based on nitride heterostructures has been proposed. The expediency of using blue and green LEDs as sources of photoluminescence excitation in the range of R- and N-lines of sapphire substrates and heavy doped ruby has been shown. 2003 Article Effect of the sapphire substrate on spectral emission features of LEDs based on InGaN/AlGaN/GaN heterostructures / D.I. Bletskan, O.R. Lukyanchuk, O.D. Bletskan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 189-191. — Бібліогр.: 4 назв. — англ. 1560-8034 PACS: 78.66.-w, 85.60.Jb http://dspace.nbuv.gov.ua/handle/123456789/118015 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Luminescence spectra of blue and green LEDs based on InxGa₁₋xN/AlyGa₁₋yN/GaN heterostructures with many quantum wells in the current range 0.1 to 10 mA have been studied besides the main electroluminescence band. In the emission spectra of blue LEDs, the energy maximum position is shifted with changing the current (hn max = 2.62 - 2.63 eV). A weak doublet of R-lines 692.8 and 694.3 nm conditioned by the re-emission of single Cr³⁺ ions in a sapphire substrate has been fixed. The use of substrates from heavy doped ruby for making white LEDs based on nitride heterostructures has been proposed. The expediency of using blue and green LEDs as sources of photoluminescence excitation in the range of R- and N-lines of sapphire substrates and heavy doped ruby has been shown. |
| format |
Article |
| author |
Bletskan, D.I. Lukyanchuk, O.R. Bletskan, O.D. |
| spellingShingle |
Bletskan, D.I. Lukyanchuk, O.R. Bletskan, O.D. Effect of the sapphire substrate on spectral emission features of LEDs based on InGaN/AlGaN/GaN heterostructures Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Bletskan, D.I. Lukyanchuk, O.R. Bletskan, O.D. |
| author_sort |
Bletskan, D.I. |
| title |
Effect of the sapphire substrate on spectral emission features of LEDs based on InGaN/AlGaN/GaN heterostructures |
| title_short |
Effect of the sapphire substrate on spectral emission features of LEDs based on InGaN/AlGaN/GaN heterostructures |
| title_full |
Effect of the sapphire substrate on spectral emission features of LEDs based on InGaN/AlGaN/GaN heterostructures |
| title_fullStr |
Effect of the sapphire substrate on spectral emission features of LEDs based on InGaN/AlGaN/GaN heterostructures |
| title_full_unstemmed |
Effect of the sapphire substrate on spectral emission features of LEDs based on InGaN/AlGaN/GaN heterostructures |
| title_sort |
effect of the sapphire substrate on spectral emission features of leds based on ingan/algan/gan heterostructures |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2003 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118015 |
| citation_txt |
Effect of the sapphire substrate on spectral emission features of LEDs based on InGaN/AlGaN/GaN heterostructures / D.I. Bletskan, O.R. Lukyanchuk, O.D. Bletskan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 189-191. — Бібліогр.: 4 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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