New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET
New nonlinear model for simulating physical and geometrical parameters to determine the junctions capacities of "the Gallium Arsenide Metal Semiconductor Field Effect Transistor" GaAs MESFET are represented in this paper. Non linear variations of the bias and gate-source and gate-drain cap...
Збережено в:
| Дата: | 2003 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118052 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET / N. Merabtine, S. Amourache, Y. Saidi, M. Zaabat, Ch. Kenzai // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 404-410. — Бібліогр.: 11 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118052 |
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dspace |
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irk-123456789-1180522017-05-29T03:04:28Z New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET Merabtine, N. Amourache, S. Saidi, Y. Zaabat, M. Kenzai, Ch. New nonlinear model for simulating physical and geometrical parameters to determine the junctions capacities of "the Gallium Arsenide Metal Semiconductor Field Effect Transistor" GaAs MESFET are represented in this paper. Non linear variations of the bias and gate-source and gate-drain capacities have been found. A simulated values show excellent agreement with experimental results. 2003 Article New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET / N. Merabtine, S. Amourache, Y. Saidi, M. Zaabat, Ch. Kenzai // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 404-410. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS: 85.30.De http://dspace.nbuv.gov.ua/handle/123456789/118052 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
New nonlinear model for simulating physical and geometrical parameters to determine the junctions capacities of "the Gallium Arsenide Metal Semiconductor Field Effect Transistor" GaAs MESFET are represented in this paper. Non linear variations of the bias and gate-source and gate-drain capacities have been found. A simulated values show excellent agreement with experimental results. |
| format |
Article |
| author |
Merabtine, N. Amourache, S. Saidi, Y. Zaabat, M. Kenzai, Ch. |
| spellingShingle |
Merabtine, N. Amourache, S. Saidi, Y. Zaabat, M. Kenzai, Ch. New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Merabtine, N. Amourache, S. Saidi, Y. Zaabat, M. Kenzai, Ch. |
| author_sort |
Merabtine, N. |
| title |
New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET |
| title_short |
New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET |
| title_full |
New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET |
| title_fullStr |
New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET |
| title_full_unstemmed |
New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET |
| title_sort |
new nonlinear model to determine cgs and cgd capacities of gaas mesfet |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2003 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118052 |
| citation_txt |
New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET / N. Merabtine, S. Amourache, Y. Saidi, M. Zaabat, Ch. Kenzai // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 404-410. — Бібліогр.: 11 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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