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New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET

New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET

New nonlinear model for simulating physical and geometrical parameters to determine the junctions capacities of "the Gallium Arsenide Metal Semiconductor Field Effect Transistor" GaAs MESFET are represented in this paper. Non linear variations of the bias and gate-source and gate-drain cap...

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Main Authors: Merabtine, N., Amourache, S., Saidi, Y., Zaabat, M., Kenzai, Ch.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/118052
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spelling irk-123456789-1180522017-05-29T03:04:28Z New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET Merabtine, N. Amourache, S. Saidi, Y. Zaabat, M. Kenzai, Ch. New nonlinear model for simulating physical and geometrical parameters to determine the junctions capacities of "the Gallium Arsenide Metal Semiconductor Field Effect Transistor" GaAs MESFET are represented in this paper. Non linear variations of the bias and gate-source and gate-drain capacities have been found. A simulated values show excellent agreement with experimental results. 2003 Article New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET / N. Merabtine, S. Amourache, Y. Saidi, M. Zaabat, Ch. Kenzai // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 404-410. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS: 85.30.De http://dspace.nbuv.gov.ua/handle/123456789/118052 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description New nonlinear model for simulating physical and geometrical parameters to determine the junctions capacities of "the Gallium Arsenide Metal Semiconductor Field Effect Transistor" GaAs MESFET are represented in this paper. Non linear variations of the bias and gate-source and gate-drain capacities have been found. A simulated values show excellent agreement with experimental results.
format Article
author Merabtine, N.
Amourache, S.
Saidi, Y.
Zaabat, M.
Kenzai, Ch.
spellingShingle Merabtine, N.
Amourache, S.
Saidi, Y.
Zaabat, M.
Kenzai, Ch.
New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Merabtine, N.
Amourache, S.
Saidi, Y.
Zaabat, M.
Kenzai, Ch.
author_sort Merabtine, N.
title New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET
title_short New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET
title_full New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET
title_fullStr New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET
title_full_unstemmed New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET
title_sort new nonlinear model to determine cgs and cgd capacities of gaas mesfet
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2003
url http://dspace.nbuv.gov.ua/handle/123456789/118052
citation_txt New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET / N. Merabtine, S. Amourache, Y. Saidi, M. Zaabat, Ch. Kenzai // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 404-410. — Бібліогр.: 11 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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AT zaabatm newnonlinearmodeltodeterminecgsandcgdcapacitiesofgaasmesfet
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first_indexed 2023-10-18T20:31:13Z
last_indexed 2023-10-18T20:31:13Z
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