Two-dimensional modeling the static parameters for a submicron field-effect transistor von Zaabat, M., Draid, M.

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Effect of different parameters on the carrier mobility in NWTFET von Marki, R., Zaabat, M.

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New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET von Merabtine, N., Amourache, S., Saidi, Y., Zaabat, M., Kenzai, Ch.

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Accurate numerical modelling the GaAs MESFET current-voltage characteristics von Merabtine, N., Khemissi, S., Zaabat, M., Belgat, M., Kenzai, C.

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Active layer – semi-insulating substrate interface effect on GaAs MESFET components von Belgat, M., Merabtine, N., Zaabat, M., Kenzai, C., Saidi, Y.

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Influence of physical and geometrical parameters on electrical properties of short gate GaAs MESFETs von Khemissi, S., Merabtine, N., Zaabat, M., Kenzai, C., Saidi, Y., Amourache, S.

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An improved contribution to optimize Si and GaAs solar cell performances von Merabtine, N., Amourache, S., Bouaouina, M., Zaabat, M., Saidi, Y., Kenzai, C.

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