2025-02-23T04:02:13-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-118052%22&qt=morelikethis&rows=5
2025-02-23T04:02:13-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-118052%22&qt=morelikethis&rows=5
2025-02-23T04:02:13-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T04:02:13-05:00 DEBUG: Deserialized SOLR response
New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET

New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET

New nonlinear model for simulating physical and geometrical parameters to determine the junctions capacities of "the Gallium Arsenide Metal Semiconductor Field Effect Transistor" GaAs MESFET are represented in this paper. Non linear variations of the bias and gate-source and gate-drain cap...

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Bibliographic Details
Main Authors: Merabtine, N., Amourache, S., Saidi, Y., Zaabat, M., Kenzai, Ch.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/118052
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2025-02-23T04:02:13-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&rows=40&rows=5&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-118052%22&qt=morelikethis
2025-02-23T04:02:13-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&rows=40&rows=5&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-118052%22&qt=morelikethis
2025-02-23T04:02:13-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T04:02:13-05:00 DEBUG: Deserialized SOLR response

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