Mechanisms of forward current transport in p-GaSe-n-InSe heterojunctions
Voltage-current characteristics forwardly biased heterojunctions p-GaSe-n-InSe made by the method of optical contact are analyzed. Asit was ascertained, the forward current is determined by tunnel-recombination processes at low voltages and overbarrier emission. The experimental characteristics are...
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| Дата: | 2003 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118074 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Mechanisms of forward current transport in p-GaSe-n-InSe heterojunctions / Z.D. Kovalyuk, V.P. Makhniy, O.I. Yanchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 458-460. — Бібліогр.: 6 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118074 |
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dspace |
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irk-123456789-1180742017-05-29T03:04:17Z Mechanisms of forward current transport in p-GaSe-n-InSe heterojunctions Kovalyuk, Z.D. Makhniy, V.P. Yanchuk, O.I. Voltage-current characteristics forwardly biased heterojunctions p-GaSe-n-InSe made by the method of optical contact are analyzed. Asit was ascertained, the forward current is determined by tunnel-recombination processes at low voltages and overbarrier emission. The experimental characteristics are defined by the known theoretical expressions for anisotipical heterojunctions with the energy diagram by Andersen. 2003 Article Mechanisms of forward current transport in p-GaSe-n-InSe heterojunctions / Z.D. Kovalyuk, V.P. Makhniy, O.I. Yanchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 458-460. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS: 73.40.-c http://dspace.nbuv.gov.ua/handle/123456789/118074 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Voltage-current characteristics forwardly biased heterojunctions p-GaSe-n-InSe made by the method of optical contact are analyzed. Asit was ascertained, the forward current is determined by tunnel-recombination processes at low voltages and overbarrier emission. The experimental characteristics are defined by the known theoretical expressions for anisotipical heterojunctions with the energy diagram by Andersen. |
| format |
Article |
| author |
Kovalyuk, Z.D. Makhniy, V.P. Yanchuk, O.I. |
| spellingShingle |
Kovalyuk, Z.D. Makhniy, V.P. Yanchuk, O.I. Mechanisms of forward current transport in p-GaSe-n-InSe heterojunctions Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Kovalyuk, Z.D. Makhniy, V.P. Yanchuk, O.I. |
| author_sort |
Kovalyuk, Z.D. |
| title |
Mechanisms of forward current transport in p-GaSe-n-InSe heterojunctions |
| title_short |
Mechanisms of forward current transport in p-GaSe-n-InSe heterojunctions |
| title_full |
Mechanisms of forward current transport in p-GaSe-n-InSe heterojunctions |
| title_fullStr |
Mechanisms of forward current transport in p-GaSe-n-InSe heterojunctions |
| title_full_unstemmed |
Mechanisms of forward current transport in p-GaSe-n-InSe heterojunctions |
| title_sort |
mechanisms of forward current transport in p-gase-n-inse heterojunctions |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2003 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118074 |
| citation_txt |
Mechanisms of forward current transport in p-GaSe-n-InSe heterojunctions / Z.D. Kovalyuk, V.P. Makhniy, O.I. Yanchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 458-460. — Бібліогр.: 6 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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AT kovalyukzd mechanismsofforwardcurrenttransportinpgaseninseheterojunctions AT makhniyvp mechanismsofforwardcurrenttransportinpgaseninseheterojunctions AT yanchukoi mechanismsofforwardcurrenttransportinpgaseninseheterojunctions |
| first_indexed |
2023-10-18T20:31:16Z |
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2023-10-18T20:31:16Z |
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